发明申请
- 专利标题： FORMING METHOD AND STRUCTURE OF POROUS LOW-K LAYER, INTERCONNECT PROCESS AND INTERCONNECT STRUCTURE
- 专利标题（中）： 多孔低K层的形成方法和结构，互连过程和互连结构
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申请号： US13038612申请日： 2011-03-02
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公开(公告)号： US20110147948A1公开(公告)日： 2011-06-23
- 发明人: Mei-Ling Chen , Kuo-Chih Lai , Su-Jen Sung , Chien-Chung Huang , Yu-Tsung Lai
- 申请人： Mei-Ling Chen , Kuo-Chih Lai , Su-Jen Sung , Chien-Chung Huang , Yu-Tsung Lai
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; B32B7/02
摘要：
A structure of a porous low-k layer is described, comprising a bottom portion and a body portion of the same atomic composition, wherein the body portion is located on the bottom portion, and the bottom portion has a density higher than the density of the body portion. An interconnect structure is also described, including the above porous low-k layer, and a conductive layer filling up a damascene opening in the porous low-k layer.
公开/授权文献
- US08350246B2 Structure of porous low-k layer and interconnect structure 公开/授权日：2013-01-08
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