发明申请
- 专利标题： MAGNETORESISTIVE ELEMENT, LOGIC GATE AND METHOD OF OPERATING LOGIC GATE
- 专利标题（中）： 逻辑元件，逻辑门和操作逻辑门的方法
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申请号： US13060574申请日： 2009-08-12
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公开(公告)号： US20110148458A1公开(公告)日： 2011-06-23
- 发明人: Tadahiko Sugibayashi , Noboru Sakimura , Ryusuke Nebashi
- 申请人： Tadahiko Sugibayashi , Noboru Sakimura , Ryusuke Nebashi
- 优先权： JP2008-215184 20080825
- 国际申请： PCT/JP2009/064262 WO 20090812
- 主分类号： H03K19/18
- IPC分类号： H03K19/18 ; G11C11/15
摘要：
A logic gate 40 according to the present invention has a magnetoresistive element 1, a magnetization state control unit 50 and an output unit 60. The magnetoresistive element 1 has a laminated structure having N (N is an integer not smaller than 3) magnetic layers 10 and N−1 nonmagnetic layers that are alternately laminated. A resistance value R of the magnetoresistive element 1 varies depending on magnetization states of the N magnetic layers 10. The magnetization state control unit 50 sets the respective magnetization states of the N magnetic layers 10 depending on N input data. The output unit 60 outputs an output data that varies depending on the resistance value R of the magnetoresistive element 1.
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