发明申请
- 专利标题: OPTOELECTRONIC DEVICE AND METHOD OF FORMING THE SAME
- 专利标题(中): 光电装置及其形成方法
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申请号: US12648861申请日: 2009-12-29
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公开(公告)号: US20110158581A1公开(公告)日: 2011-06-30
- 发明人: Tzung-I Su , Ming-I Wang , Bang-Chiang Lan , Te-Kan Liao , Chao-An Su , Chien-Hsin Huang , Hui-Min Wu , Tzung-Han Tan , Min Chen , Meng-Jia Lin
- 申请人: Tzung-I Su , Ming-I Wang , Bang-Chiang Lan , Te-Kan Liao , Chao-An Su , Chien-Hsin Huang , Hui-Min Wu , Tzung-Han Tan , Min Chen , Meng-Jia Lin
- 申请人地址: TW Hsinchu
- 专利权人: UNITED MICROELECTRONICS CORP.
- 当前专利权人: UNITED MICROELECTRONICS CORP.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G02B6/12
- IPC分类号: G02B6/12 ; H01L21/30
摘要:
An optoelectronic device including a substrate, a half-boat-shaped material layer, a deep trench isolation structure, and an optical waveguide is provided. The substrate has a first area. The half-boat-shaped material layer is disposed in the substrate within the first area. The refractive index of the half-boat-shaped material layer is lower than that of the substrate. A top surface of the half-boat-shaped material layer is coplanar with the surface of the substrate. The deep trench isolation structure is disposed in the substrate within the first area and located at one side of a bow portion of the half-boat-shaped material layer. The optical waveguide is disposed on the substrate within the first area. The optical waveguide overlaps a portion of the deep trench isolation structure and at least a portion of the half-boat-shaped material layer.
公开/授权文献
- US08139907B2 Optoelectronic device and method of forming the same 公开/授权日:2012-03-20
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