公开(公告)号：US20110097033A1

公开(公告)日：2011-04-28

申请号：US12605891

申请日：2009-10-26

申请人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Hui-Min Wu ,  Chien-Hsin Huang ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

发明人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Hui-Min Wu ,  Chien-Hsin Huang ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

IPC分类号： G02B6/12 ,  G02B1/10 ,  G02B6/32

CPC分类号： G02B6/12004 ,  G02B6/305

摘要： A focusing member and an optoelectronic device having the same are provided. The focusing member includes multiple levels of conductive plugs and multiple levels of conductive layers that together form an inversed half-boat shape. The optoelectronic device includes a bottom layer, an optical waveguide above the bottom layer, a dielectric layer covering the optical waveguide, and the above focusing member disposed at an edge of the optoelectronic device and located in the dielectric layer above the optical waveguide. A wider end of the inversed half-boat shape of the focusing member faces the outside of the optoelectronic device. The refractive indexes of the bottom layer and the dielectric layer are smaller than that of the optical waveguide.

摘要翻译： 提供聚焦构件和具有该聚焦构件的光电子器件。 聚焦构件包括多个级别的导电插塞和多层导电层，这些导电层一起形成反转的半舟形状。 光电子器件包括底层，底层上方的光波导，覆盖光波导的电介质层，以及设置在光电子器件的边缘并位于光波导上方的电介质层中的上述聚焦构件。 聚焦构件的反转半舟形的较宽端面向光电器件的外侧。 底层和电介质层的折射率小于光波导的折射率。

公开(公告)号：US08208768B2

公开(公告)日：2012-06-26

申请号：US12605891

申请日：2009-10-26

申请人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Hui-Min Wu ,  Chien-Hsin Huang ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

发明人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Hui-Min Wu ,  Chien-Hsin Huang ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

IPC分类号： G02B6/12

CPC分类号： G02B6/12004 ,  G02B6/305

摘要： A focusing member and an optoelectronic device having the same are provided. The focusing member includes multiple levels of conductive plugs and multiple levels of conductive layers that together form an inversed half-boat shape. The optoelectronic device includes a bottom layer, an optical waveguide above the bottom layer, a dielectric layer covering the optical waveguide, and the above focusing member disposed at an edge of the optoelectronic device and located in the dielectric layer above the optical waveguide. A wider end of the inversed half-boat shape of the focusing member faces the outside of the optoelectronic device. The refractive indexes of the bottom layer and the dielectric layer are smaller than that of the optical waveguide.

摘要翻译： 提供聚焦构件和具有该聚焦构件的光电子器件。 聚焦构件包括多个级别的导电插塞和多层导电层，这些导电层一起形成反转的半舟形状。 光电子器件包括底层，底层上方的光波导，覆盖光波导的电介质层，以及设置在光电子器件的边缘并位于光波导上方的电介质层中的上述聚焦构件。 聚焦构件的反转半舟形的较宽端面向光电器件的外侧。 底层和电介质层的折射率小于光波导的折射率。

公开(公告)号：US20110158582A1

公开(公告)日：2011-06-30

申请号：US12649337

申请日：2009-12-30

申请人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Chien-Hsin Huang ,  Hui-Min Wu ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

发明人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Chien-Hsin Huang ,  Hui-Min Wu ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

IPC分类号： G02B6/122 ,  G02B6/136 ,  H01L21/70

CPC分类号： H01L29/78 ,  G02B6/131 ,  G02B6/136

摘要： A method of forming the structure of the semiconductor device having a waveguide. Firstly, a SOI substrate including a bulk silicon, an insulating layer, and a silicon layer is provided and a device region and a waveguide region are defined on the SOI substrate. Afterwards, a protection layer and a patterned shielding layer are formed to cover the waveguide region and expose the device region. Subsequently, a recess is formed by etching the protection layer, the silicon layer and the insulating layer and thereby the bulk silicon is exposed. After that, an epitaxial silicon layer is formed in the recess and a semiconductor device is subsequently formed on the epitaxial silicon layer. Also, the present invention conquers the poor electrical performance of the semiconductor device integrated into the SOI substrate.

摘要翻译： 一种形成具有波导的半导体器件的结构的方法。 首先，提供包括体硅，绝缘层和硅层的SOI衬底，并且在SOI衬底上限定器件区域和波导区域。 之后，形成保护层和图案化屏蔽层以覆盖波导区域并暴露设备区域。 随后，通过蚀刻保护层，硅层和绝缘层，从而暴露体硅，形成凹部。 之后，在凹槽中形成外延硅层，随后在外延硅层上形成半导体器件。 此外，本发明还涉及集成到SOI衬底中的半导体器件的差的电性能。

公开(公告)号：US08139907B2

公开(公告)日：2012-03-20

申请号：US12648861

申请日：2009-12-29

申请人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Chien-Hsin Huang ,  Hui-Min Wu ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

发明人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Chien-Hsin Huang ,  Hui-Min Wu ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

IPC分类号： G02B6/12

CPC分类号： G02B6/12004 ,  G02B2006/12061

摘要： An optoelectronic device including a substrate, a half-boat-shaped material layer, a deep trench isolation structure, and an optical waveguide is provided. The substrate has a first area. The half-boat-shaped material layer is disposed in the substrate within the first area. The refractive index of the half-boat-shaped material layer is lower than that of the substrate. A top surface of the half-boat-shaped material layer is coplanar with the surface of the substrate. The deep trench isolation structure is disposed in the substrate within the first area and located at one side of a bow portion of the half-boat-shaped material layer. The optical waveguide is disposed on the substrate within the first area. The optical waveguide overlaps a portion of the deep trench isolation structure and at least a portion of the half-boat-shaped material layer.

摘要翻译： 提供了包括基板，半舟形材料层，深沟槽隔离结构和光波导的光电子器件。 衬底具有第一区域。 半船形材料层设置在第一区域内的基板内。 半舟状材料层的折射率低于基板的折射率。 半舟状材料层的上表面与基板的表面共面。 深沟槽隔离结构设置在第一区域内的基板中，并且位于半舟形材料层的弓形部分的一侧。 光波导路设置在第一区域内的基板上。 光波导与深沟槽隔离结构的一部分和半舟形材料层的至少一部分重叠。

公开(公告)号：US20110158581A1

公开(公告)日：2011-06-30

申请号：US12648861

申请日：2009-12-29

申请人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Chien-Hsin Huang ,  Hui-Min Wu ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

发明人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Chien-Hsin Huang ,  Hui-Min Wu ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

IPC分类号： G02B6/12 ,  H01L21/30

CPC分类号： G02B6/12004 ,  G02B2006/12061

摘要： An optoelectronic device including a substrate, a half-boat-shaped material layer, a deep trench isolation structure, and an optical waveguide is provided. The substrate has a first area. The half-boat-shaped material layer is disposed in the substrate within the first area. The refractive index of the half-boat-shaped material layer is lower than that of the substrate. A top surface of the half-boat-shaped material layer is coplanar with the surface of the substrate. The deep trench isolation structure is disposed in the substrate within the first area and located at one side of a bow portion of the half-boat-shaped material layer. The optical waveguide is disposed on the substrate within the first area. The optical waveguide overlaps a portion of the deep trench isolation structure and at least a portion of the half-boat-shaped material layer.

摘要翻译： 提供了包括基板，半舟形材料层，深沟槽隔离结构和光波导的光电子器件。 衬底具有第一区域。 半船形材料层设置在第一区域内的基板内。 半舟状材料层的折射率低于基板的折射率。 半舟状材料层的上表面与基板的表面共面。 深沟槽隔离结构设置在第一区域内的基板中，并且位于半舟形材料层的弓形部分的一侧。 光波导路设置在第一区域内的基板上。 光波导与深沟槽隔离结构的一部分和半舟形材料层的至少一部分重叠。