A magnetoresistive device with perpendicular magnetization includes a magnetic reference layer, a first magnetic multi-layer film, a tunneling barrier layer, a second magnetic multi-layer film, and a magnetic free layer. The magnetic reference layer has a first magnetization direction, perpendicular to the magnetic reference layer. The first magnetic multi-layer film, having non-magnetic material layer, is disposed in contact on the magnetic reference layer. The tunneling barrier layer is disposed in contact on the first magnetic multi-layer film. The second magnetic multi-layer film, having non-magnetic material layer, is disposed in contact on the tunneling barrier layer. The magnetic free layer is disposed in contact on the second magnetic multi-layer film, having a second magnetization direction capable of being switched to be parallel or anti-parallel to the first magnetization direction.