发明申请
US20110170359A1 WORD LINE VOLTAGE BOOST SYSTEM AND METHOD FOR NON-VOLATILE MEMORY DEVICES AND MEMORY DEVICES AND PROCESSOR-BASED SYSTEM USING SAME
有权
用于非易失性存储器件和存储器件的WORD线电压升压系统和方法以及使用其的基于处理器的系统
- 专利标题： WORD LINE VOLTAGE BOOST SYSTEM AND METHOD FOR NON-VOLATILE MEMORY DEVICES AND MEMORY DEVICES AND PROCESSOR-BASED SYSTEM USING SAME
- 专利标题（中）： 用于非易失性存储器件和存储器件的WORD线电压升压系统和方法以及使用其的基于处理器的系统
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申请号： US13070121申请日： 2011-03-23
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公开(公告)号： US20110170359A1公开(公告)日： 2011-07-14
- 发明人: Violante Moschiano , Giovanni Santin , Ercole Di lorio
- 申请人： Violante Moschiano , Giovanni Santin , Ercole Di lorio
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 主分类号： G11C16/10
- IPC分类号： G11C16/10
摘要：
The voltage of a selected word line is increased beyond the voltage to which a respective string driver transistor is capable of driving the word line by capacitively coupling a voltage to the selected word line from adjacent word lines. The voltage is capacitively coupled to the selected word line by increasing the voltages of the adjacent word lines after a programming voltage has been applied to a string driver transistor for the selected word line and after a string driver voltage has been applied to the gates of all of the string driver transistors in an array.
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