发明申请
- 专利标题： Three Dimensional Integration With Through Silicon Vias Having Multiple Diameters
- 专利标题（中）： 通过具有多个直径的硅通孔进行三维集成
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申请号： US12687289申请日： 2010-01-14
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公开(公告)号： US20110171582A1公开(公告)日： 2011-07-14
- 发明人: Mukta G. Farooq , Ramona Kei , Emily R. Kinser , Anthony D. Lisi , Richard Wise , Hakeem Yusuff
- 申请人： Mukta G. Farooq , Ramona Kei , Emily R. Kinser , Anthony D. Lisi , Richard Wise , Hakeem Yusuff
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： G03F7/20
- IPC分类号： G03F7/20
摘要：
A method is disclosed which includes patterning a photoresist layer on a substrate of a structure, removing a first portion of the photoresist layer to expose a first area of the substrate, etching the first area to form a cavity having a first depth, removing a second portion of the photoresist to expose an additional area of the substrate, and etching the cavity to expose a first conductor in the structure and the additional area to expose a second conductor in the structure.
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