发明申请
- 专利标题： Semiconductor Apparatus and Fabrication Method of the Same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13010962申请日： 2011-01-21
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公开(公告)号： US20110180797A1公开(公告)日： 2011-07-28
- 发明人: Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
- 申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
- 申请人地址： JP Kanagawa-ken
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Kanagawa-ken
- 优先权： JP2002-305084 20021018
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/04
摘要：
It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.
公开/授权文献
- US08134153B2 Semiconductor apparatus and fabrication method of the same 公开/授权日：2012-03-13
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