发明申请
US20110195196A1 METHOD FOR MANUFACTURING TRANSPARENT OXIDE ELECTRODE USING ELECTRON BEAM POST-TREATMENT 审中-公开
使用电子束后处理制造透明氧化物电极的方法

  • 专利标题: METHOD FOR MANUFACTURING TRANSPARENT OXIDE ELECTRODE USING ELECTRON BEAM POST-TREATMENT
  • 专利标题(中): 使用电子束后处理制造透明氧化物电极的方法
  • 申请号: US13122964
    申请日: 2009-10-05
  • 公开(公告)号: US20110195196A1
    公开(公告)日: 2011-08-11
  • 发明人: Yong Hwan Kim
  • 申请人: Yong Hwan Kim
  • 优先权: KR10-2008-0097530 20081006
  • 国际申请: PCT/KR09/05676 WO 20091005
  • 主分类号: C23C16/40
  • IPC分类号: C23C16/40 B05D3/06 C23C14/34 C23C14/46 C23C14/08 C23C4/10 C25D5/48
METHOD FOR MANUFACTURING TRANSPARENT OXIDE ELECTRODE USING ELECTRON BEAM POST-TREATMENT
摘要:
The present invention relates to a method for manufacturing a transparent oxide electrode using an electron beam post-treatment. The method for manufacturing a transparent oxide electrode comprises the steps of: (a) forming a thin film for the transparent anode on a substrate; and (b) irradiating an electron beam to the surface of the thin film for the transparent oxide electrode. The method of the present invention is characterized in that no additional heat treatment process is performed after step (a). The method for manufacturing a transparent oxide electrode according to the present invention does not perform a high-temperature heat treatment process but rather performs a low-temperature electron beam irradiation process as a post-treatment, thus obtaining a transparent oxide electrode having excellent characteristics in case where the substrate is made of glass, Pyrex, quartz or even a polymer material which has a low resistance against heat.
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