发明申请
- 专利标题： LOW ON-RESISTANCE LATERAL DOUBLE-DIFFUSED MOS DEVICE
- 专利标题（中）： 低耐电流性双向扩散MOS器件
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申请号： US13100449申请日： 2011-05-04
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公开(公告)号： US20110204441A1公开(公告)日： 2011-08-25
- 发明人: Hsueh-I Huang , Chien-Wen Chu , Cheng-Chi Lin , Shih-Chin Lien , Chin-Pen Yeh , Shyi-Yuan Wu
- 申请人： Hsueh-I Huang , Chien-Wen Chu , Cheng-Chi Lin , Shih-Chin Lien , Chin-Pen Yeh , Shyi-Yuan Wu
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.
公开/授权文献
- US08362558B2 Low on-resistance lateral double-diffused MOS device 公开/授权日：2013-01-29
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