公开(公告)号：US08362558B2

公开(公告)日：2013-01-29

申请号：US13100449

申请日：2011-05-04

申请人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L29/02

CPC分类号： H01L29/0847 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

摘要翻译： 提供了横向双扩散MOS器件。 该装置包括：具有第一导电类型的第一阱和具有布置在衬底中并且彼此相邻的第二导电类型的第二阱; 漏极和分别设置在第一和第二阱中的具有第一导电类型的源极区域; 设置在源极和漏极区域之间的第一阱上的场氧化物层（FOX）; 设置在延伸到FOX的源极和漏极区域之间的第二阱上的栅极导电层; 在所述基板和所述栅极导电层之间的栅极介电层; 在栅极导电层的一部分下方的第一阱中具有第一导电类型的掺杂区域和连接到漏极区域的FOX。 在掺杂区域和源极区域之间的第二阱中限定沟道区域。

公开(公告)号：US20110266601A1

公开(公告)日：2011-11-03

申请号：US13180236

申请日：2011-07-11

申请人： Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L29/772

CPC分类号： H01L29/6659 ,  H01L27/11558 ,  H01L29/1083 ,  H01L29/66825 ,  H01L29/7833 ,  H01L29/788

摘要： A semiconductor device has a gate multiple doping regions on both sides of the gate. The gate can be shared by a transistor and a capacitor.

摘要翻译： 半导体器件在栅极的两侧具有栅极多个掺杂区域。 栅极可以由晶体管和电容器共享。

公开(公告)号：US20090256184A1

公开(公告)日：2009-10-15

申请号：US12102637

申请日：2008-04-14

申请人： Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L27/105 ,  H01L21/8239

CPC分类号： H01L29/6659 ,  H01L27/11558 ,  H01L29/1083 ,  H01L29/66825 ,  H01L29/7833 ,  H01L29/788

摘要： A nonvolatile memory integrated circuit has a semiconductor substrate and a nonvolatile memory device on the semiconductor substrate. The device has a transistor and a capacitor on the semiconductor substrate, and a shared floating gate connecting the gate regions of the transistor and the capacitor. The transistor has at least a doping region defining the source and drain regions, as well as three other doping regions overlapping the source and drain regions. Also disclosed are a nonvolatile memory circuit with multiple such nonvolatile memory device, and methods for making the nonvolatile memory circuit with one or more such nonvolatile memory devices.

摘要翻译： 非易失性存储器集成电路在半导体衬底上具有半导体衬底和非易失性存储器件。 该器件在半导体衬底上具有晶体管和电容器，以及连接晶体管的栅极区域和电容器的共用浮置栅极。 晶体管至少具有限定源极和漏极区域的掺杂区域以及与源极和漏极区域重叠的三个其它掺杂区域。 还公开了具有多个这种非易失性存储器件的非易失性存储器电路以及用于使非易失性存储器电路具有一个或多个这种非易失性存储器件的方法

公开(公告)号：US20120025352A1

公开(公告)日：2012-02-02

申请号：US12847467

申请日：2010-07-30

申请人： Cheng-Chi Lin ,  Wei-Hsun Hsu ,  Shuo-Lun Tu ,  Shih-Chin Lien ,  Chin-Pen Yeh

发明人： Cheng-Chi Lin ,  Wei-Hsun Hsu ,  Shuo-Lun Tu ,  Shih-Chin Lien ,  Chin-Pen Yeh

IPC分类号： H01L29/73

CPC分类号： H01L29/7322 ,  H01L29/0692

摘要： A bipolar junction transistor (BJT) device including a base region, an emitter region and a collector region comprises a substrate, a deep well region in the substrate, a first well region in the deep well region to serve as the base region, a second well region in the deep well region to serve as the collector region, the second well region and the first well region forming a first junction therebetween, and a first doped region in the first well region to serve as the emitter region, the first doped region and the first well region forming a second junction therebetween, wherein the first doped region includes a first section extending in a first direction and a second section extending in a second direction different from the first direction, the first section and the second section being coupled with each other.

摘要翻译： 包括基极区域，发射极区域和集电极区域的双极结型晶体管（BJT）器件包括衬底，衬底中的深阱区域，深阱区域中用作基极区域的第一阱区域，第二 阱区域作为集电极区域，第二阱区域和第一阱区域在其间形成第一接合部，第一阱区域中的第一掺杂区域用作发射极区域，第一掺杂区域 并且所述第一阱区域在其间形成第二结，其中所述第一掺杂区域包括沿第一方向延伸的第一部分和沿与所述第一方向不同的第二方向延伸的第二部分，所述第一部分和所述第二部分与 彼此。

公开(公告)号：US20070108520A1

公开(公告)日：2007-05-17

申请号：US11399427

申请日：2006-04-07

申请人： Cheng-Chi Lin ,  Shin Su ,  Chien-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

发明人： Cheng-Chi Lin ,  Shin Su ,  Chien-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC分类号： H01L29/0847 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7835

摘要： The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.

摘要翻译： 本发明公开了一种横向双扩散金属氧化物半导体晶体管（LDMOS）及其制造方法。 LDMOS包括衬底，第一阱，漏极，第二阱和源极。 衬底包括第一导电掺杂剂。 第一阱包括第二导电掺杂剂并形成在衬底的一部分中，并且漏极位于第一阱中。 第二阱包括第一导电掺杂剂并且形成在衬底的另一部分中，并且源位于第二阱中。 源包括从衬底的顶表面向下延伸的轻掺杂区域和重掺杂区域。 轻掺杂区域的深度大于重掺杂区域的深度。

公开(公告)号：US20110204441A1

公开(公告)日：2011-08-25

申请号：US13100449

申请日：2011-05-04

申请人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

摘要翻译： 提供了横向双扩散MOS器件。 该装置包括：具有第一导电类型的第一阱和具有布置在衬底中并且彼此相邻的第二导电类型的第二阱; 漏极和分别设置在第一和第二阱中的具有第一导电类型的源极区域; 设置在源极和漏极区域之间的第一阱上的场氧化物层（FOX）; 设置在延伸到FOX的源极和漏极区域之间的第二阱上的栅极导电层; 在所述基板和所述栅极导电层之间的栅极介电层; 在栅极导电层的一部分下方的第一阱中具有第一导电类型的掺杂区域和连接到漏极区域的FOX。 在掺杂区域和源极区域之间的第二阱中限定沟道区域。

公开(公告)号：US07999296B2

公开(公告)日：2011-08-16

申请号：US12102637

申请日：2008-04-14

申请人： Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L27/105 ,  H01L21/8239

CPC分类号： H01L29/6659 ,  H01L27/11558 ,  H01L29/1083 ,  H01L29/66825 ,  H01L29/7833 ,  H01L29/788

摘要： A nonvolatile memory integrated circuit has a semiconductor substrate and a nonvolatile memory device on the semiconductor substrate. The device has a transistor and a capacitor on the semiconductor substrate, and a shared floating gate connecting the gate regions of the transistor and the capacitor. The transistor has at least a doping region defining the source and drain regions, as well as three other doping regions overlapping the source and drain regions. Also disclosed are a nonvolatile memory circuit with multiple such nonvolatile memory device, and methods for making the nonvolatile memory circuit with one or more such nonvolatile memory devices.

摘要翻译： 非易失性存储器集成电路在半导体衬底上具有半导体衬底和非易失性存储器件。 该器件在半导体衬底上具有晶体管和电容器，以及连接晶体管的栅极区域和电容器的共用浮置栅极。 晶体管至少具有限定源极和漏极区域的掺杂区域以及与源极和漏极区域重叠的三个其它掺杂区域。 还公开了具有多个这种非易失性存储器件的非易失性存储器电路以及用于使非易失性存储器电路具有一个或多个这种非易失性存储器件的方法

公开(公告)号：US07868370B2

公开(公告)日：2011-01-11

申请号：US12102608

申请日：2008-04-14

申请人： Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L27/105 ,  H01L21/8239

CPC分类号： H01L29/6659 ,  H01L27/11558 ,  H01L29/1083 ,  H01L29/66825 ,  H01L29/7833 ,  H01L29/788

摘要： A nonvolatile memory integrated circuit has a semiconductor substrate and a nonvolatile memory device on the semiconductor substrate. The device has a transistor and a capacitor on the semiconductor substrate, and a shared floating gate connecting the gate regions of the transistor and the capacitor. The transistor has at least a doping region defining the source and drain regions, as well as three other doping regions overlapping the source and drain regions. Also disclosed are a nonvolatile memory circuit with multiple such nonvolatile memory device, and methods for making the nonvolatile memory circuit with one or more such nonvolatile memory devices.

公开(公告)号：US08525243B2

公开(公告)日：2013-09-03

申请号：US13180236

申请日：2011-07-11

申请人： Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L27/105

CPC分类号： H01L29/6659 ,  H01L27/11558 ,  H01L29/1083 ,  H01L29/66825 ,  H01L29/7833 ,  H01L29/788

摘要： A semiconductor device has a gate multiple doping regions on both sides of the gate. The gate can be shared by a transistor and a capacitor.

摘要翻译： 半导体器件在栅极的两侧具有栅极多个掺杂区域。 栅极可以由晶体管和电容器共享。

公开(公告)号：US08487360B2

公开(公告)日：2013-07-16

申请号：US12876711

申请日：2010-09-07

申请人： Cheng-Chi Lin ,  Shih-Chin Lien ,  Shyi-Yuan Wu ,  Chin-Pen Yeh

发明人： Cheng-Chi Lin ,  Shih-Chin Lien ,  Shyi-Yuan Wu ,  Chin-Pen Yeh

IPC分类号： H01L27/112

CPC分类号： H01L27/0629 ,  H01L27/11558 ,  H01L29/66825 ,  H01L29/7881

摘要： A semiconductor memory device includes a substrate of a first impurity type, a first well region of a second impurity type in the substrate, the second impurity type being different from the first impurity type, a second well region of the first impurity type in the substrate, a patterned first dielectric layer on the substrate extending over the first and second well regions, a patterned first gate structure on the patterned first dielectric layer, a patterned second dielectric layer on the patterned first gate structure, and a patterned second gate structure on the patterned second dielectric layer. The patterned first gate structure may include a first section extending in a first direction and a second section extending in a second direction orthogonal to the first section, wherein the first section and the second section intersects each other in a cross pattern. The patterned second gate structure may include at least one of a first section extending in the first direction over the first section of the patterned first gate structure or a second section extending in the second direction over the second section of the patterned first gate structure.

摘要翻译： 半导体存储器件包括：第一杂质型衬底，衬底中第二杂质类型的第一阱区，第二杂质型不同于第一杂质型;衬底中第一杂质型第二阱区; 在衬底上的图案化的第一介电层延伸在第一和第二阱区上，图案化的第一介电层上的图案化的第一栅极结构，图案化的第一栅极结构上的图案化的第二介电层，以及图案化的第二栅极结构 图案化的第二介电层。 图案化的第一栅极结构可以包括沿第一方向延伸的第一部分和沿与第一部分正交的第二方向延伸的第二部分，其中第一部分和第二部分以交叉图案彼此相交。 图案化的第二栅极结构可以包括在图案化的第一栅极结构的第一部分上的第一方向上延伸的第一部分或者在图案化的第一栅极结构的第二部分上沿第二方向延伸的第二部分中的至少一个。