发明申请
US20110204517A1 Semiconductor Device with Vias Having More Than One Material
审中-公开
具有多于一种材料的通孔的半导体器件
- 专利标题： Semiconductor Device with Vias Having More Than One Material
- 专利标题（中）： 具有多于一种材料的通孔的半导体器件
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申请号： US12710399申请日： 2010-02-23
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公开(公告)号： US20110204517A1公开(公告)日： 2011-08-25
- 发明人: Shiqun Gu , Yiming Li , Steve J. Bezuk
- 申请人： Shiqun Gu , Yiming Li , Steve J. Bezuk
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM INCORPORATED
- 当前专利权人： QUALCOMM INCORPORATED
- 当前专利权人地址： US CA San Diego
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/768 ; H01L21/50
摘要：
A semiconductor die includes a via within a substrate material of the semiconductor die. The via includes a first conductive material having a first Coefficient of Thermal Expansion (CTE) and a second conductive material between the first conductive material and the substrate material of the semiconductor die. The second conductive material has a second CTE between the first CTE and a CTE of the substrate material of the semiconductor die. The first conductive material can be copper. The second conductive material can be tungsten and/or nickel. The substrate material can be silicon.
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