发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND DRIVING METHOD OF SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件的半导体器件和驱动方法
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申请号: US13027546申请日: 2011-02-15
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公开(公告)号: US20110205785A1公开(公告)日: 2011-08-25
- 发明人: Shuhei NAGATSUKA , Kiyoshi KATO , Takanori MATSUZAKI , Hiroki INOUE
- 申请人: Shuhei NAGATSUKA , Kiyoshi KATO , Takanori MATSUZAKI , Hiroki INOUE
- 申请人地址: JP Atsugi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi
- 优先权: JP2010-035386 20100219
- 主分类号: G11C11/24
- IPC分类号: G11C11/24
摘要:
An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device includes a memory cell including a widegap semiconductor, for example, an oxide semiconductor and the semiconductor device includes a potential conversion circuit which functions to output a potential lower than a reference potential for reading data from the memory cell. With the use of a widegap semiconductor, a semiconductor device capable of sufficiently reducing the off-state current of a transistor included in a memory cell and capable of holding data for a long time can be provided.
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