发明申请
- 专利标题： MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件的制造方法
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申请号： US12905395申请日： 2010-10-15
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公开(公告)号： US20110207264A1公开(公告)日： 2011-08-25
- 发明人: Manabu TOMISAKA , Akira Tai , Kazuo Akamatsu , Yutaka Fukuda , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki , Mayu Fukuda
- 申请人： Manabu TOMISAKA , Akira Tai , Kazuo Akamatsu , Yutaka Fukuda , Yoshiko Fukuda , Yuji Fukuda , Mika Ootsuki , Mayu Fukuda
- 申请人地址： JP Kariya-city
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya-city
- 优先权： JP2009-240729 20091019; JP2010-202191 20100909
- 主分类号： H01L21/56
- IPC分类号： H01L21/56
摘要：
A method of manufacturing a semiconductor device includes cutting a part of a resin insulating layer formed on a surface of a semiconductor substrate with a cutting tool. The cutting the part of the resin insulating layer includes cutting a portion of the resin insulating layer that has a surface on which a metal layer is disposed. The cutting the portion of the resin insulating layer is performed in such a manner that, in a stress distribution inside the resin insulating layer along an edge portion of the cutting tool and a peripheral portion of the edge portion, a width at 90% of a maximum value is not more than 1.3 μm.
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