公开(公告)号：US20110207264A1

公开(公告)日：2011-08-25

申请号：US12905395

申请日：2010-10-15

申请人： Manabu TOMISAKA ,  Akira Tai ,  Kazuo Akamatsu ,  Yutaka Fukuda ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki ,  Mayu Fukuda

发明人： Manabu TOMISAKA ,  Akira Tai ,  Kazuo Akamatsu ,  Yutaka Fukuda ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki ,  Mayu Fukuda

IPC分类号： H01L21/56

CPC分类号： H01L21/304 ,  H01L29/66333 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device includes cutting a part of a resin insulating layer formed on a surface of a semiconductor substrate with a cutting tool. The cutting the part of the resin insulating layer includes cutting a portion of the resin insulating layer that has a surface on which a metal layer is disposed. The cutting the portion of the resin insulating layer is performed in such a manner that, in a stress distribution inside the resin insulating layer along an edge portion of the cutting tool and a peripheral portion of the edge portion, a width at 90% of a maximum value is not more than 1.3 μm.

摘要翻译： 半导体器件的制造方法包括：利用切削工具切断形成在半导体基板的表面上的树脂绝缘层的一部分。 切割树脂绝缘层的一部分包括切割具有设置有金属层的表面的树脂绝缘层的一部分。 切割树脂绝缘层的部分是这样一种方式进行的：在树脂绝缘层沿着切削工具的边缘部分和边缘部分的周边部分的应力分布中，90％的宽度 最大值不大于1.3μm。

公开(公告)号：US20110198733A1

公开(公告)日：2011-08-18

申请号：US12887874

申请日：2010-09-22

申请人： Manabu Tomisaka ,  Michio Kameyama ,  Terukazu Fukaya ,  Kazuhito Katoh ,  Yutaka Fukuda ,  Akira Tai ,  Kazuo Akamatsu ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki ,  Mayu Fukuda

发明人： Manabu Tomisaka ,  Michio Kameyama ,  Terukazu Fukaya ,  Kazuhito Katoh ,  Yutaka Fukuda ,  Akira Tai ,  Kazuo Akamatsu ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki ,  Mayu Fukuda

IPC分类号： H01L29/06 ,  H01L21/66

CPC分类号： H01L21/76804 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/11 ,  H01L24/741 ,  H01L2224/02166 ,  H01L2224/0384 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05669 ,  H01L2224/11505 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/749 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/01026 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2224/05552

摘要： In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.

摘要翻译： 在制造半导体器件的方法中，在半导体衬底的表面上形成电极层，并且在半导体衬底的表面上形成树脂绝缘层，使得可以用树脂绝缘层覆盖电极层。 通过使用前角为零或负值的工具钻头，在绝缘层中形成锥形孔。 锥形孔具有由绝缘层限定的开口，由电极层限定的底部和将开口连接到底部的侧壁。

公开(公告)号：US08263490B2

公开(公告)日：2012-09-11

申请号：US12923576

申请日：2010-09-28

申请人： Manabu Tomisaka ,  Hidetoshi Katou ,  Yutaka Fukuda ,  Akira Tai ,  Kazuo Akamatsu ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki

发明人： Manabu Tomisaka ,  Hidetoshi Katou ,  Yutaka Fukuda ,  Akira Tai ,  Kazuo Akamatsu ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki

IPC分类号： H01L21/44

CPC分类号： G01B11/06 ,  G01B11/306 ,  H01L21/32115 ,  H01L21/7684 ,  H01L22/12 ,  H01L22/20 ,  H01L24/27 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  Y10T29/52 ,  H01L2924/01014 ,  H01L2924/00

摘要： A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and causing a deformation device to deform the semiconductor substrate based on the data so that a distance between a cutting plane and the surface part falls within a required accuracy in cutting amount. In deforming the semiconductor substrate, multiple actuators are used as the deformation device. A pitch of the multiple actuators is set to a value that is greater than one-half of wavelength of spatial frequency of a thickness distribution of the semiconductor substrate and that is less than or equal to the wavelength.

摘要翻译： 公开了半导体器件的金属电极的形成方法。 该方法包括：获取关于半导体衬底的表面部分的表面形状的数据; 并且使变形装置基于数据使半导体衬底变形，使得切割平面和表面部分之间的距离落入所需切割量的精度。 在使半导体基板变形时，使用多个致动器作为变形装置。 多个致动器的间距被设定为大于半导体衬底的厚度分布的空间频率的波长的一半的值，小于或等于该波长的值。