发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US13029146申请日： 2011-02-17
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公开(公告)号： US20110210326A1公开(公告)日： 2011-09-01
- 发明人: Hideomi SUZAWA , Shinya SASAGAWA , Motomu KURATA
- 申请人： Hideomi SUZAWA , Shinya SASAGAWA , Motomu KURATA
- 申请人地址： JP Atsugi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi
- 优先权： JP2010-043137 20100226
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode, in which the source electrode or the drain electrode comprises a first conductive layer and a second conductive layer having a region which extends beyond an end portion of the first conductive layer in a channel length direction and which overlaps with part of the gate electrode, in which a sidewall insulating layer is provided over the extended region of the second conductive layer, and in which the sidewall insulating layer comprises a stack of a plurality of different material layers.
公开/授权文献
- US08653513B2 Semiconductor device with sidewall insulating layer 公开/授权日：2014-02-18
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