发明申请
US20110210428A1 METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, SEMICONDUCTOR COMPONENT AND INTERMEDIATE PRODUCT IN THE PRODUCTION THEREOF 审中-公开
生产半导体元件,半导体元件及其生产中的中间产品的方法

  • 专利标题: METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, SEMICONDUCTOR COMPONENT AND INTERMEDIATE PRODUCT IN THE PRODUCTION THEREOF
  • 专利标题(中): 生产半导体元件,半导体元件及其生产中的中间产品的方法
  • 申请号: US12673244
    申请日: 2008-08-12
  • 公开(公告)号: US20110210428A1
    公开(公告)日: 2011-09-01
  • 发明人: Bernd BitnarHolger NeuhausAndreas Krause
  • 申请人: Bernd BitnarHolger NeuhausAndreas Krause
  • 优先权: DE102007038744.1 20070816
  • 国际申请: PCT/EP2008/006624 WO 20080812
  • 主分类号: H01L21/02
  • IPC分类号: H01L21/02 H01L21/28 H01L23/48
METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, SEMICONDUCTOR COMPONENT AND INTERMEDIATE PRODUCT IN THE PRODUCTION THEREOF
摘要:
Method for producing semiconductor components with a contact structure having a high aspect ratio comprising the following steps: providing an essentially plane semiconductor substrate having a first side and a second side, applying a mask onto at least a first partial area on at least one of the sides of the semiconductor substrate and applying a contact structure onto at least a second partial area, which is different from first partial area, on at least one of the sides of semiconductor substrate.
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