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    LIGHT-INDUCED PLATING
    2.
    发明申请
    LIGHT-INDUCED PLATING 审中-公开
    光诱导镀层

    公开(公告)号：US20100108525A1

    公开(公告)日：2010-05-06

    申请号：US12612967

    申请日：2009-11-05

    申请人： Andreas Krause ,  Bernd Bitnar ,  Claudia Lengsfeld ,  Holger Neuhaus

    发明人： Andreas Krause ,  Bernd Bitnar ,  Claudia Lengsfeld ,  Holger Neuhaus

    IPC分类号： C25D7/12 ,  C25D17/08 ,  C25D5/00

    CPC分类号： C25D7/123 ,  C25D5/006 ,  C25D17/001

    摘要： An apparatus for the light-supported precipitation of an electrolyte on a semiconductor component comprises a plating bath with an electrolyte, a first electrode arranged in the plating bath and a second electrode arranged outside the plating bath, a holding device for the semiconductor component and an irradiation device for irradiating the semiconductor component with electromagnetic radiation, the irradiation device being arranged outside the plating bath.

    摘要翻译： 用于半导体部件上的电解质的轻负载析出的装置包括具有电解质的电镀液，布置在电镀液中的第一电极和布置在电镀液外的第二电极，用于半导体部件的保持装置和 用于用电磁辐射照射半导体部件的照射装置，该照射装置设置在电镀液的外侧。

    METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, SEMICONDUCTOR COMPONENT AND INTERMEDIATE PRODUCT IN THE PRODUCTION THEREOF
    4.
    发明申请
    METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, SEMICONDUCTOR COMPONENT AND INTERMEDIATE PRODUCT IN THE PRODUCTION THEREOF 审中-公开
    生产半导体元件，半导体元件及其生产中的中间产品的方法

    公开(公告)号：US20110210428A1

    公开(公告)日：2011-09-01

    申请号：US12673244

    申请日：2008-08-12

    申请人： Bernd Bitnar ,  Holger Neuhaus ,  Andreas Krause

    发明人： Bernd Bitnar ,  Holger Neuhaus ,  Andreas Krause

    IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L23/48

    CPC分类号： H01L21/0271 ,  C25D5/022 ,  H01L21/3086 ,  H01L21/32139

    摘要： Method for producing semiconductor components with a contact structure having a high aspect ratio comprising the following steps: providing an essentially plane semiconductor substrate having a first side and a second side, applying a mask onto at least a first partial area on at least one of the sides of the semiconductor substrate and applying a contact structure onto at least a second partial area, which is different from first partial area, on at least one of the sides of semiconductor substrate.

    摘要翻译： 用于制造具有高纵横比的接触结构的半导体部件的方法包括以下步骤：提供具有第一侧面和第二侧面的基本平面的半导体衬底，在至少一个第一部分区域上的至少一个第一局部区域上施加掩模 在半导体衬底的至少一个侧面上将接触结构施加到与第一部分区域不同的至少第二部分区域上。

    METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT
    7.
    发明申请
    METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT 审中-公开
    制造半导体元件的方法

    公开(公告)号：US20110036398A1

    公开(公告)日：2011-02-17

    申请号：US12839434

    申请日：2010-07-20

    申请人： Bernd Bitnar ,  Holger Neuhaus

    发明人： Bernd Bitnar ,  Holger Neuhaus

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01L21/76898 ,  H01L31/022458 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： An emitter wrap-through solar cell may include a semiconductor substrate having a first side, and a second side opposite the first side, contact structures having at least one emitter contact, and at least one base contact, wherein both the at least one emitter contact and the at least one base contact are arranged on the second side of the semiconductor substrate, and the contact structures have a metallization having nickel silicide.

    摘要翻译： 发射体包裹太阳能电池可以包括具有第一侧和与第一侧相对的第二侧的半导体衬底，具有至少一个发射极接触的接触结构和至少一个基极接触，其中至少一个发射极接触 并且所述至少一个基极触点设置在所述半导体衬底的第二侧上，并且所述接触结构具有具有镍硅化物的金属化。

    Semiconductor component
    10.
    发明授权
    Semiconductor component 有权
    半导体元件

    公开(公告)号：US08324732B2

    公开(公告)日：2012-12-04

    申请号：US12537450

    申请日：2009-08-07

    申请人： Andreas Krause ,  Bernd Bitnar ,  Holger Neuhaus ,  Martin Kutzer ,  Kristian Schlegel ,  Claudia Lengsfeld

    发明人： Andreas Krause ,  Bernd Bitnar ,  Holger Neuhaus ,  Martin Kutzer ,  Kristian Schlegel ,  Claudia Lengsfeld

    IPC分类号： H01L23/48

    CPC分类号： H01L31/022425 ,  H01L21/268 ,  Y02E10/50

    摘要： A semiconductor component, in particular in the form of a solar cell, comprises a two-dimensional semiconductor substrate with a first side, a second side which is arranged opposite thereto, a surface normal which is perpendicular to said first and second sides, and a plurality of recesses which are at least arranged on the second side and extend in the direction of the surface normal, at least one dielectric passivation layer which is arranged on the second side, an electrically conducting contact layer arranged on the passivation layer, a plurality of contact elements for electrically connecting the contact layer with the semiconductor substrate, which contact elements are electrically conductive, are in electrically conducting connection with both the semiconductor substrate and with the contact layer, fill at least 50%, in particular at least 90%, preferably 100% of in each case one of the recesses, project beyond the recesses with a projection in the direction perpendicular to the surface normal and are of an easily solderable material.

    摘要翻译： 特别是太阳能电池形式的半导体元件包括具有第一侧的二维半导体衬底，与其相对设置的第二侧，垂直于所述第一和第二侧的表面法线，以及 多个凹部，其至少布置在第二侧上并且沿着表面法线的方向延伸;布置在第二侧上的至少一个电介质钝化层，布置在钝化层上的导电接触层，多个 用于将接触层与半导体衬底电连接的接触元件，这些接触元件是导电的，与半导体衬底和接触层两者都导电连接，填充至少50％，特别是至少90％，优选地 在每种情况下，100％的凹槽之一突出于与凹槽垂直的方向上的突起 表面正常，并且是易于焊接的材料。