发明申请
- 专利标题： Method and Apparatus for Testing a Memory Device
- 专利标题（中）： 用于测试存储器件的方法和装置
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申请号： US12716341申请日： 2010-03-03
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公开(公告)号： US20110215827A1公开(公告)日： 2011-09-08
- 发明人: Baker S. Mohammad , Hong S. Kim , Paul D. Bassett
- 申请人： Baker S. Mohammad , Hong S. Kim , Paul D. Bassett
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM INCORPORATED
- 当前专利权人： QUALCOMM INCORPORATED
- 当前专利权人地址： US CA San Diego
- 主分类号： G01R31/26
- IPC分类号： G01R31/26
摘要：
In a particular embodiment, a method includes receiving a testing activation signal at a controller coupled to a semiconductor device. The method further includes biasing a well of at least one transistor of the semiconductor device in response to the received testing activation signal. The bias is provided by a biasing circuit that is responsive to the controller. While the well is biased, a test of the semiconductor device is performed to generate testing data.
公开/授权文献
- US08466707B2 Method and apparatus for testing a memory device 公开/授权日：2013-06-18