发明申请
- 专利标题： MANUFACTURING METHOD OF OXIDE SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF TRANSISTOR
- 专利标题（中）： 氧化物半导体膜的制造方法和晶体管的制造方法
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申请号： US13034725申请日： 2011-02-25
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公开(公告)号： US20110217815A1公开(公告)日： 2011-09-08
- 发明人: Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA
- 申请人： Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA
- 申请人地址： JP Kanagawa-ken
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Kanagawa-ken
- 优先权： JP2010-048604 20100305
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/20
摘要：
An object is to provide a manufacturing method of an oxide semiconductor film with high crystallinity. Another object is to provide a manufacturing method of a transistor with high field effect mobility. In a manufacturing method of an oxide semiconductor film, an oxide semiconductor film is formed over a substrate in an atmosphere in which oxygen is purposely not contained, and then the oxide semiconductor film is crystallized by a heat treatment in an atmosphere containing oxygen.
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