公开(公告)号：US20120241734A1

公开(公告)日：2012-09-27

申请号：US13420987

申请日：2012-03-15

申请人： Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

发明人： Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

IPC分类号： H01L29/12 ,  H01L21/36

CPC分类号： H01L29/66969 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02565 ,  H01L21/44 ,  H01L21/47573 ,  H01L21/477 ,  H01L29/045 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/7869

摘要： An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided.

摘要翻译： 目的是通过使用具有稳定电特性的氧化物半导体膜来提供具有稳定电特性的高度可靠的半导体器件。 另一个目的是通过使用具有高结晶度的氧化物半导体膜来提供具有较高迁移率的半导体器件。 结晶氧化物半导体膜形成在表面粗糙度减小的绝缘膜上并与其接触，由此氧化物半导体膜可以具有稳定的电特性。 因此，可以提供具有稳定电特性的高度可靠的半导体器件。 此外，可以提供具有较高移动性的半导体器件。

公开(公告)号：US20120138922A1

公开(公告)日：2012-06-07

申请号：US13307398

申请日：2011-11-30

申请人： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

发明人： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC分类号： H01L29/12

CPC分类号： H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

摘要翻译： 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

公开(公告)号：US20110220011A1

公开(公告)日：2011-09-15

申请号：US13042691

申请日：2011-03-08

申请人： Akiharu MIYANAGA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

发明人： Akiharu MIYANAGA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

IPC分类号： C30B1/02

CPC分类号： C30B1/04 ,  C30B29/16

摘要： A method of growing a single crystal of gallium oxide at a lower temperature than the melting point (1900° C.) of gallium oxide is provided. A compound film (hereinafter referred to as “gallium oxide compound film”) containing Ga atoms, O atoms, and atoms or molecules that easily sublimate, is heated to sublimate the atoms or molecules that easily sublimate from inside the gallium oxide compound film, thereby growing a single crystal of gallium oxide with a heat energy that is lower than a binding energy of gallium oxide.

摘要翻译： 提供了在比氧化镓的熔点（1900℃）低的温度下生长氧化镓单晶的方法。 含有Ga原子，O原子，容易升华的原子或分子的化合物膜（以下称为“氧化镓化合物膜”）被加热，使从氧化镓化合物膜内部容易升华的原子或分子升华，由此 以比氧化镓的结合能低的热能生长单晶的氧化镓。

公开(公告)号：US20110217815A1

公开(公告)日：2011-09-08

申请号：US13034725

申请日：2011-02-25

申请人： Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

发明人： Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/02631 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02667 ,  H01L29/66969 ,  H01L29/7869

摘要： An object is to provide a manufacturing method of an oxide semiconductor film with high crystallinity. Another object is to provide a manufacturing method of a transistor with high field effect mobility. In a manufacturing method of an oxide semiconductor film, an oxide semiconductor film is formed over a substrate in an atmosphere in which oxygen is purposely not contained, and then the oxide semiconductor film is crystallized by a heat treatment in an atmosphere containing oxygen.

摘要翻译： 目的在于提供具有高结晶度的氧化物半导体膜的制造方法。 另一个目的是提供具有高场效应迁移率的晶体管的制造方法。 在氧化物半导体膜的制造方法中，在不含氧的气氛中的基板上形成氧化物半导体膜，然后通过在含氧气氛中的热处理使氧化物半导体膜结晶化。

公开(公告)号：US20120064664A1

公开(公告)日：2012-03-15

申请号：US13222513

申请日：2011-08-31

申请人： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

发明人： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

IPC分类号： H01L21/44

CPC分类号： H01L29/78606 ,  H01L23/552 ,  H01L23/564 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.

摘要翻译： 本发明的目的是制造具有稳定的电特性和高可靠性的氧化物半导体膜的半导体装置。 通过利用包含在氧化物半导体靶中的多种原子的原子量的差异，形成结晶氧化物半导体膜，而不进行多个步骤，优选将低原子量的锌沉积在氧化物绝缘膜上 形成包含锌的晶种; 并且具有高原子量的锡，铟等沉积在晶种上同时引起晶体生长。 此外，通过使用具有包含锌作为核的六方晶系结构的晶种进行晶体生长来形成结晶氧化物半导体膜，从而形成单晶氧化物半导体膜或大致单晶氧化物半导体膜。

公开(公告)号：US20110078220A1

公开(公告)日：2011-03-31

申请号：US12960982

申请日：2010-12-06

申请人： Yusuke NONAKA ,  Akira YAMAMOTO ,  Naoto MATSUNAMI ,  Koji SONODA

发明人： Yusuke NONAKA ,  Akira YAMAMOTO ,  Naoto MATSUNAMI ,  Koji SONODA

IPC分类号： G06F12/00 ,  G06F17/30

CPC分类号： G06F3/0643 ,  G06F3/0607 ,  G06F3/0649 ,  G06F3/0685 ,  G06F17/30091

摘要： Network arrangements wherein a network interface receives write requests of files of a file system from a client computer, each file including respective data and respective metadata. A processor registers the metadata of a file to at least one first type storage medium and writes the data of the file to the at least one second type storage medium based on file value information. The storage system stores information of address ranges of an integrated logical unit, in which each address range corresponds to the at least one first type storage medium and the at least one second type storage medium included in the integrated logical unit, and provides the information of address ranges of the integrated logical unit to the client computer.

摘要翻译： 网络布置，其中网络接口从客户端计算机接收文件系统的文件的写入请求，每个文件包括相应的数据和相应的元数据。 处理器将文件的元数据注册到至少一个第一类型的存储介质，并且基于文件值信息将文件的数据写入至少一个第二类型的存储介质。 存储系统存储集成逻辑单元的地址范围的信息，其中每个地址范围对应于包括在集成逻辑单元中的至少一个第一类型存储介质和至少一个第二类型存储介质，并且提供信息 到客户端计算机的集成逻辑单元的地址范围。

公开(公告)号：US20120061663A1

公开(公告)日：2012-03-15

申请号：US13226713

申请日：2011-09-07

申请人： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

发明人： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

IPC分类号： H01L29/12 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78603

摘要： An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

摘要翻译： 本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。 通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（ 使用第一材料膜作为核的结晶氧化物半导体膜）。 作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

公开(公告)号：US20100082923A1

公开(公告)日：2010-04-01

申请号：US12276634

申请日：2008-11-24

申请人： Shunichi WAKABAYASHI ,  Kosuke SAKAI ,  Yusuke NONAKA

发明人： Shunichi WAKABAYASHI ,  Kosuke SAKAI ,  Yusuke NONAKA

IPC分类号： G06F12/02 ,  G06F12/00 ,  G06F12/16

CPC分类号： G06F11/2069 ,  G06F3/0617 ,  G06F3/0635 ,  G06F3/0647 ,  G06F3/067 ,  G06F11/2071 ,  G06F11/2082

摘要： A storage system includes a controller that controls switching from a system before switching to a system after switching. The controller includes a check unit that checks whether a connection between the system before switching and the system after switching is enabled, or not, a determination unit that determines whether switching from the system before switching to the system after switching is enabled, or not, a fail-over information migration unit that migrates fail-over information included in the system before switching to the system after switching, a user data migration unit that migrates user data in the system before switching to the system after switching, and a switching execution unit that enables the system after switching to receive I/O from a host.

摘要翻译： 存储系统包括控制器，其在切换到切换到系统之前控制从系统的切换。 控制器包括检查单元，用于检查切换之前的系统与切换后的系统之间的连接是否被启用;确定单元，确定是否启用了在切换之后切换到系统之前从系统切换， 故障切换信息迁移单元，其在切换后切换到系统之前迁移系统中包括的故障转移信息;用户数据迁移单元，其在切换到切换到系统之前迁移系统中的用户数据;切换执行单元 这使得系统在切换后能够从主机接收I / O。

公开(公告)号：US20090089525A1

公开(公告)日：2009-04-02

申请号：US12330933

申请日：2008-12-09

申请人： Yusuke NONAKA ,  Naoto Matsunami ,  Akira Nishimoto ,  Yoichi Mizuno

发明人： Yusuke NONAKA ,  Naoto Matsunami ,  Akira Nishimoto ,  Yoichi Mizuno

IPC分类号： G06F12/16 ,  G06F12/00

CPC分类号： G06F11/2069

摘要： In the case in which data in a storage system A is remotely copied to a storage system B, it is not taken into account whether the data of the remote copy is WORM data. In the case in which a setting is made such that data stored in a volume in the storage system A is copied to a volume in the storage system B, storage system A judges whether an attribute to the effect that data can be referred to and can be updated or to the effect that data can be referred to but cannot be updated is added to the volume in the storage system A. Then, if the volume is a volume to which the attribute to the effect that data can be referred to but cannot be updated is added, such attribute is added to the volume in the storage system B.

摘要翻译： 在将存储系统A中的数据远程复制到存储系统B的情况下，不考虑远程副本的数据是否是WORM数据。 在存储系统A中的存储在卷中的数据被复制到存储系统B中的卷的设置的情况下，存储系统A判断是否可以引用可以参考数据的属性，并且可以 被更新或者可以将数据引用但不能被更新的效果添加到存储系统A中的卷。然后，如果卷是能够引用数据的属性的卷，但是不能 被添加，这样的属性被添加到存储系统B中的卷。

公开(公告)号：US20110283058A1

公开(公告)日：2011-11-17

申请号：US13193130

申请日：2011-07-28

申请人： Akihiko ARAKI ,  Yoshiki KANO ,  Sadahiro SUGIMOTO ,  Yusuke NONAKA

发明人： Akihiko ARAKI ,  Yoshiki KANO ,  Sadahiro SUGIMOTO ,  Yusuke NONAKA

IPC分类号： G06F12/02

CPC分类号： G06F12/0246 ,  G06F2212/1036 ,  G06F2212/7202 ,  G06F2212/7211 ,  G11C2211/5641

摘要： To extend endurance and reduce bit cost, a method and a storage apparatus are provided, which storage apparatus includes a controller and a semiconductor storage media that includes a first storage device and a second storage device having an upper limit of an erase count of data smaller than the first storage device. Area conversion information includes correspondence of a first address to be specified as a data storage destination and a second address of an area in which data is to be stored. A rewrite frequency of stored data is recorded for each area. The controller selects an area corresponding to the first address, determines whether or not the rewrite frequency of the selected area is equal to or larger than a first threshold value, when the rewrite frequency is equal to or larger than the threshold value, selects an area to be provided by the first storage device, and when the rewrite frequency is smaller than the threshold value, selects an area to be provided by the second storage device and maps the address of the selected area to the first address.

摘要翻译： 为了延长耐久性和降低比特成本，提供了一种方法和存储装置，该存储装置包括控制器和半导体存储介质，该半导体存储介质包括第一存储装置和第二存储装置，其具有较小数据的擦除次数的上限 比第一个存储设备。 区域转换信息包括要指定为数据存储目的地的第一地址和要存储数据的区域的第二地址的对应关系。 记录每个区域的存储数据的重写频率。 控制器选择对应于第一地址的区域，确定所选区域的重写频率是否等于或大于第一阈值，当重写频率等于或大于阈值时，选择一个区域 由第一存储装置提供，并且当重写频率小于阈值时，选择由第二存储装置提供的区域，并将所选区域的地址映射到第一地址。