发明申请
- 专利标题： RESISTANCE VARIABLE ELEMENT AND RESISTANCE VARIABLE MEMORY DEVICE
- 专利标题（中）： 电阻可变元件和电阻可变存储器件
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申请号： US13128575申请日： 2010-07-12
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公开(公告)号： US20110220862A1公开(公告)日： 2011-09-15
- 发明人: Koji Arita , Takumi Mikawa , Atsushi Himeno , Yoshio Kawashima , Kenji Tominaga
- 申请人： Koji Arita , Takumi Mikawa , Atsushi Himeno , Yoshio Kawashima , Kenji Tominaga
- 优先权： JP2009-165076 20090713
- 国际申请： PCT/JP2010/004498 WO 20100712
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/02
摘要：
A resistance variable element (100) used in a through-hole cross-point structure memory device, according to the present invention, and a resistance variable memory device including the resistance variable element, includes a substrate (7) and an interlayer insulating layer (3) formed on the substrate, and have a configuration in which a through-hole (4) is formed to penetrate the interlayer insulating layer, a first resistance variable layer (2) comprising transition metal oxide is formed outside the through-hole, a second resistance variable layer (5) comprising transition metal oxide is formed inside the through-hole, the first resistance variable layer is different in resistivity from the second resistance variable layer, and the first resistance variable layer and the second resistance variable layer are in contact with each other only in an opening (20) of the through-hole which is closer to the substrate.
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