发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13044766申请日： 2011-03-10
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公开(公告)号： US20110220985A1公开(公告)日： 2011-09-15
- 发明人: Jung-Min Son , Woon-Kyung Lee
- 申请人： Jung-Min Son , Woon-Kyung Lee
- 优先权： KR10-2010-0021370 20100310
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L29/423 ; H01L29/788 ; H01L21/28
摘要：
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a charge storage structure and a gate. The charge storage structure is formed on a substrate. The gate is formed on the charge storage structure. The gate includes a lower portion formed of silicon and an upper portion formed of metal silicide. The upper portion of the gate has a width greater than that of the lower portion of the gate.
公开/授权文献
- US08350344B2 Semiconductor device and method of fabricating the same 公开/授权日：2013-01-08
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