发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US12923857申请日： 2010-10-12
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公开(公告)号： US20110221482A1公开(公告)日： 2011-09-15
- 发明人: Ho-jung Kim , Jong-seob Kim , Jai-Kwang Shin , Jae-joon Oh , Ki-ha Hong , In-jun Hwang , Hyuk-soon Choi
- 申请人： Ho-jung Kim , Jong-seob Kim , Jai-Kwang Shin , Jae-joon Oh , Ki-ha Hong , In-jun Hwang , Hyuk-soon Choi
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2010-0022948 20100315
- 主分类号： H03K3/01
- IPC分类号： H03K3/01 ; H03K17/00
摘要：
Provided is a semiconductor device that may include a switching device having a negative threshold voltage, and a driving unit between a power terminal and a ground terminal and providing a driving voltage for driving the switching device. The switching device may be connected to a virtual ground node having a virtual ground voltage that is greater than a ground voltage supplied from the ground terminal and may be turned on when a difference between the driving voltage and the virtual ground voltage is greater than the negative threshold voltage.
公开/授权文献
- US08508194B2 Semiconductor device 公开/授权日：2013-08-13
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