公开(公告)号：US09660048B2

公开(公告)日：2017-05-23

申请号：US12929492

申请日：2011-01-28

Applicant: In-jun Hwang ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Ki-ha Hong ,  Jai-kwang Shin ,  Jae-joon Oh

Inventor： In-jun Hwang ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Ki-ha Hong ,  Jai-kwang Shin ,  Jae-joon Oh

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/66462 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/7783 ,  H01L29/7786

Abstract: High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode, a gate electrode and a drain electrode disposed on a plurality of semiconductor layers having different polarities. A dual depletion region exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer, an intermediate material layer and a lower material layer, and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer.

公开(公告)号：US09543391B2

公开(公告)日：2017-01-10

申请号：US13517815

申请日：2012-06-14

Applicant: In-jun Hwang ,  Jae-joon Oh ,  Jae-won Lee ,  Hyo-ji Choi

Inventor： In-jun Hwang ,  Jae-joon Oh ,  Jae-won Lee ,  Hyo-ji Choi

IPC: H01L29/20 ,  H01L29/423 ,  H01L29/778 ,  H01L29/10 ,  H01L29/16

CPC classification number: H01L29/2003 ,  H01L29/1029 ,  H01L29/1608 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/7786 ,  H01L29/7789

Abstract: According to example embodiments a transistor includes a channel layer on a substrate, a first channel supply layer on the channel, a depletion layer, a second channel supply layer, source and drain electrodes on the first channel supply layer, and a gate electrode on the depletion layer. The channel includes a 2DEG channel configured to generate a two-dimensional electron gas and a depletion area. The first channel supply layer corresponds to the 2DEG channel and defines an opening that exposes the depletion area. The depletion layer is on the depletion area of the channel layer. The second channel supply layer is between the depletion layer and the depletion area.

Abstract translation: 根据示例性实施例，晶体管包括衬底上的沟道层，沟道上的第一沟道供应层，耗尽层，第二沟道供应层，第一沟道供应层上的源电极和漏电极，以及栅电极 耗尽层 通道包括被配置为产生二维电子气和耗尽区的2DEG通道。 第一通道供应层对应于2DEG通道并且限定暴露耗尽区的开口。 耗尽层在通道层的耗尽区上。 第二通道供应层位于耗尽层和耗尽区之间。

公开(公告)号：US09123740B2

公开(公告)日：2015-09-01

申请号：US13613677

申请日：2012-09-13

Applicant: Hyuk-soon Choi ,  Jong-seob Kim ,  Jai-kwang Shin ,  Chang-yong Um ,  Jae-joon Oh ,  Jong-bong Ha ,  Ki-ha Hong ,  In-jun Hwang

Inventor： Hyuk-soon Choi ,  Jong-seob Kim ,  Jai-kwang Shin ,  Chang-yong Um ,  Jae-joon Oh ,  Jong-bong Ha ,  Ki-ha Hong ,  In-jun Hwang

IPC: H01L29/15 ,  H01L29/66 ,  H01L29/10 ,  H01L29/207 ,  H01L29/20 ,  H01L29/778 ,  H01L29/36

CPC classification number: H01L29/66462 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/7785 ,  H01L29/7787

Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer and a channel layer. The channel layer may include an effective channel region and a high resistivity region. The effective channel region may be between the high resistivity region and the channel supply layer. The high resistivity region may be a region into which impurities are ion-implanted. According to example embodiments, a method of forming a HEMT includes forming a device unit, including a channel layer and a channel supply layer, on a first substrate; adhering a second substrate to the device unit; removing the first substrate; and forming a high resistivity region by ion-implanting impurities into at least a portion of the channel layer.

Abstract translation: 根据示例性实施例，高电子迁移率晶体管（HEMT）包括沟道供应层和沟道层。 沟道层可以包括有效沟道区和高电阻率区。 有效沟道区可以在高电阻率区域和沟道供应层之间。 高电阻率区域可以是离子注入杂质的区域。 根据示例实施例，形成HEMT的方法包括在第一基板上形成包括沟道层和沟道供应层的器件单元; 将第二基板粘附到所述装置单元; 去除第一衬底; 以及通过将杂质离子注入到沟道层的至少一部分中而形成高电阻率区域。

公开(公告)号：US08878246B2

公开(公告)日：2014-11-04

申请号：US13151475

申请日：2011-06-02

Applicant: In-jun Hwang ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Ki-ha Hong

Inventor： In-jun Hwang ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Ki-ha Hong

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/267 ,  H01L29/51 ,  H01L29/10 ,  H01L29/20 ,  H01L29/423

CPC classification number: H01L29/778 ,  H01L29/0847 ,  H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7785 ,  H01L29/7786

Abstract: A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm.

Abstract translation: 高电子迁移率晶体管（HEMT）包括源电极，栅电极，漏电极，其中感应二维电子气（2DEG）沟道的沟道形成层，以及用于诱导2DEG沟道的沟道供应层 在通道形成层中。 源电极和漏极位于沟道供给层上。 通道增加层位于通道供应层和源极和漏极之间。 沟道供应层的厚度小于约15nm。

公开(公告)号：US20130252410A1

公开(公告)日：2013-09-26

申请号：US13599980

申请日：2012-08-30

Applicant: Xianyu WENXU ,  Jeong-Yub LEE ,  Chang -Youl MOON ,  Yong-Young PARK ,  Woo Young YANG ,  Jae-Joon OH ,  In-Jun HWANG

Inventor： Xianyu WENXU ,  Jeong-Yub LEE ,  Chang -Youl MOON ,  Yong-Young PARK ,  Woo Young YANG ,  Jae-Joon OH ,  In-Jun HWANG

IPC: H01L21/28 ,  H01L21/18 ,  H01L21/283

CPC classification number: H01L21/268 ,  H01L21/28575 ,  H01L21/3245 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/517 ,  H01L29/66462

Abstract: A method for forming a selective ohmic contact for a Group III-nitride heterojunction structured device may include forming a conductive layer and a capping layer on an epitaxial substrate including at least one Group III-nitride heterojunction layer and having a defined ohmic contact region, the capping layer being formed on the conductive layer or between the conductive layer and the Group III-nitride heterojunction layer in one of the ohmic contact region and non-ohmic contact region, and applying at least one of a laser annealing process and an induction annealing process on the substrate at a temperature of less than or equal to about 750° C. to complete the selective ohmic contact in the ohmic contact region.

Abstract translation: 用于形成用于III族氮化物异质结结构器件的选择性欧姆接触的方法可包括在包括至少一个III族氮化物异质结层并且具有限定的欧姆接触区域的外延衬底上形成导电层和覆盖层， 覆盖层形成在导电层之间或在欧姆接触区域和非欧姆接触区域之一的导电层和III族氮化物异质结层之间，并且施加激光退火工艺和感应退火工艺中的至少一个 在小于或等于约750℃的温度下在衬底上完成欧姆接触区域中的选择性欧姆接触。

公开(公告)号：US20130175539A1

公开(公告)日：2013-07-11

申请号：US13613677

申请日：2012-09-13

Applicant: Hyuk-soon CHOI ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Chang-yong UM ,  Jae-joon OH ,  Jong-bong HA ,  Ki-ha HONG ,  In-jun HWANG

Inventor： Hyuk-soon CHOI ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Chang-yong UM ,  Jae-joon OH ,  Jong-bong HA ,  Ki-ha HONG ,  In-jun HWANG

IPC: H01L29/778 ,  H01L21/335 ,  H01L29/205

CPC classification number: H01L29/66462 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/7785 ,  H01L29/7787

Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer and a channel layer. The channel layer may include an effective channel region and a high resistivity region. The effective channel region may be between the high resistivity region and the channel supply layer. The high resistivity region may be a region into which impurities are ion-implanted. According to example embodiments, a method of forming a HEMT includes forming a device unit, including a channel layer and a channel supply layer, on a first substrate; adhering a second substrate to the device unit; removing the first substrate; and forming a high resistivity region by ion-implanting impurities into at least a portion of the channel layer.

Abstract translation: 根据示例性实施例，高电子迁移率晶体管（HEMT）包括沟道供应层和沟道层。 沟道层可以包括有效沟道区和高电阻率区。 有效沟道区可以在高电阻率区域和沟道供应层之间。 高电阻率区域可以是离子注入杂质的区域。 根据示例实施例，形成HEMT的方法包括在第一基板上形成包括沟道层和沟道供应层的器件单元; 将第二基板粘附到所述装置单元; 去除第一衬底; 以及通过将杂质离子注入到沟道层的至少一部分中而形成高电阻率区域。

公开(公告)号：US20130001587A1

公开(公告)日：2013-01-03

申请号：US13534730

申请日：2012-06-27

Applicant: In-jun Hwang ,  Ki-ha Hong ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Jai-kwang Shin

Inventor： In-jun Hwang ,  Ki-ha Hong ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Jai-kwang Shin

IPC: H01L29/778 ,  H01L21/335 ,  H01L29/20

CPC classification number: H01L29/0657 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L29/0653 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7782 ,  H01L29/7787

Abstract: High electron mobility transistors (HEMTs) including a cavity below a drain and methods of manufacturing HEMTS including removing a portion of a substrate below a drain.

Abstract translation: 包括漏极下面的空穴的高电子迁移率晶体管（HEMT）和制造HEMTS的方法包括去除漏极下方的衬底的一部分。

公开(公告)号：US20120280244A1

公开(公告)日：2012-11-08

申请号：US13307769

申请日：2011-11-30

Applicant: In-jun Hwang ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Hyuk-soon Choi ,  Ki-ha Hong

Inventor： In-jun Hwang ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Hyuk-soon Choi ,  Ki-ha Hong

IPC: H01L29/778 ,  H01L21/335

CPC classification number: H01L29/7787 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/432 ,  H01L29/66462

Abstract: High electron mobility transistors (HEMTs) and methods of manufacturing the same. A HEMT may include a channel layer and a channel supply layer, and the channel supply layer may be a multilayer structure. The channel supply layer may include an etch stop layer and an upper layer on the etch stop layer. A recess region may be in the upper layer. The recess region may be a region recessed to an interface between the upper layer and the etch stop layer. A gate electrode may be on the recess region.

Abstract translation: 高电子迁移率晶体管（HEMT）及其制造方法。 HEMT可以包括沟道层和沟道供应层，并且沟道供应层可以是多层结构。 沟道供应层可以包括蚀刻停止层和蚀刻停止层上的上层。 凹部区域可以在上层。 凹陷区域可以是凹陷到上层和蚀刻停止层之间的界面的区域。 栅电极可以在凹陷区域上。

公开(公告)号：US20120112202A1

公开(公告)日：2012-05-10

申请号：US13179859

申请日：2011-07-11

Applicant: In-jun Hwang ,  Ki-ha Hong ,  Jong-seob Kim ,  Jae-Kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Hyuk-soon Choi

Inventor： In-jun Hwang ,  Ki-ha Hong ,  Jong-seob Kim ,  Jae-Kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Hyuk-soon Choi

IPC: H01L29/778 ,  H01L21/335

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

Abstract: An Enhancement-mode (E-mode) high electron mobility transistor (HEMT) includes a channel layer with a 2-Dimensional Electron Gas (2DEG), a barrier layer inducing the 2DEG in the channel layer, source and drain electrodes on the barrier layer, a depletion layer on the barrier layer between the source and drain electrodes, and a gate electrode on the depletion layer. The barrier layer is recessed below the gate electrode and the depletion layer covers a surface of the recess and extends onto the barrier layer around the recess.

Abstract translation: 增强模式（E模式）高电子迁移率晶体管（HEMT）包括具有二维电子气体（2DEG）的沟道层，在沟道层中引起2DEG的势垒层，势垒层上的源极和漏极 ，源极和漏极之间的阻挡层上的耗尽层，以及耗尽层上的栅电极。 阻挡层凹陷在栅电极下方，耗尽层覆盖凹槽的表面并且延伸到围绕凹槽的阻挡层上。

公开(公告)号：US20110303952A1

公开(公告)日：2011-12-15

申请号：US13151475

申请日：2011-06-02

Applicant: In-jun Hwang ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Ki-ha Hong

Inventor： In-jun Hwang ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Ki-ha Hong

IPC: H01L29/778 ,  H01L21/335

CPC classification number: H01L29/778 ,  H01L29/0847 ,  H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7785 ,  H01L29/7786

Abstract: A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm.

Abstract translation: 高电子迁移率晶体管（HEMT）包括源电极，栅电极，漏电极，其中感应二维电子气（2DEG）沟道的沟道形成层，以及用于诱导2DEG沟道的沟道供应层 在通道形成层中。 源电极和漏极位于沟道供给层上。 通道增加层位于通道供应层和源极和漏极之间。 沟道供应层的厚度小于约15nm。