发明申请
US20110223320A1 Methods Of Forming Material Over A Substrate And Methods Of Forming Capacitors 有权
在基板上形成材料的方法和形成电容器的方法

  • 专利标题: Methods Of Forming Material Over A Substrate And Methods Of Forming Capacitors
  • 专利标题(中): 在基板上形成材料的方法和形成电容器的方法
  • 申请号: US12720305
    申请日: 2010-03-09
  • 公开(公告)号: US20110223320A1
    公开(公告)日: 2011-09-15
  • 发明人: Zhe SongChris M. Carlson
  • 申请人: Zhe SongChris M. Carlson
  • 主分类号: B05D5/12
  • IPC分类号: B05D5/12 C23C16/40
Methods Of Forming Material Over A Substrate And Methods Of Forming Capacitors
摘要:
A method of forming a material over a substrate includes performing at least one iteration of the following temporally separated ALD-type sequence. First, an outermost surface of a substrate is contacted with a first precursor to chemisorb a first species onto the outermost surface from the first precursor. Second, the outermost surface is contacted with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor. The first and second precursors include ligands and different central atoms. At least one of the first and second precursors includes at least two different composition ligands. The two different composition ligands are polyatomic or a lone halogen. Third, the chemisorbed first species and the chemisorbed second species are contacted with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.
信息查询
0/0