发明申请
- 专利标题： SPUTTERING DEVICE AND SPUTTERING METHOD
- 专利标题（中）： 溅射装置和溅射方法
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申请号： US13121338申请日： 2009-09-29
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公开(公告)号： US20110223346A1公开(公告)日： 2011-09-15
- 发明人: Toru Kitada , Naoki Watanabe , Motonobu Nagai , Masahiro Suenaga , Takeo Konno
- 申请人： Toru Kitada , Naoki Watanabe , Motonobu Nagai , Masahiro Suenaga , Takeo Konno
- 申请人地址： JP Kawasaki-shi
- 专利权人： CANON ANELVA CORPORATION
- 当前专利权人： CANON ANELVA CORPORATION
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2008-252858 20080930
- 国际申请： PCT/JP2009/004973 WO 20090929
- 主分类号： C23C14/35
- IPC分类号： C23C14/35 ; B05C9/02
摘要：
A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate (21) and performing oblique incidence sputtering by using high discharge power.A sputtering apparatus (1) is provided with a substrate holder (22) for holding rotatably the substrate (21) in the surface direction of the processing surface of the substrate; a substrate magnetic field forming device (30) which is disposed to surround the substrate (21) and forms a magnetic field on the processing surface of the substrate (21); cathodes (41) which are arranged diagonally above the substrate (21) and are supplied with electric discharge power; a position detecting device (23) for detecting a rotation position of the substrate (21) ; and a control device (50) which adjusts the rotation speed of the substrate (21) in accordance with the rotation position detected by the position detecting device (23).
公开/授权文献
- US08968538B2 Sputtering device and sputtering method 公开/授权日：2015-03-03
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