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    Sputtering device and sputtering method
    1.
    发明授权
    Sputtering device and sputtering method 有权
    溅射装置和溅射法

    公开(公告)号：US08968538B2

    公开(公告)日：2015-03-03

    申请号：US13121338

    申请日：2009-09-29

    Applicant: Toru Kitada ,  Naoki Watanabe ,  Motonobu Nagai ,  Masahiro Suenaga ,  Takeo Konno

    Inventor： Toru Kitada ,  Naoki Watanabe ,  Motonobu Nagai ,  Masahiro Suenaga ,  Takeo Konno

    IPC: C23C14/00 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/54 ,  C23C14/34 ,  H01J37/32 ,  H01J37/34 ,  H01F41/18

    CPC classification number: C23C14/542 ,  C23C14/3464 ,  H01F41/18 ,  H01J37/3266 ,  H01J37/32733 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3414

    Abstract: A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate (21) and performing oblique incidence sputtering by using high discharge power.A sputtering apparatus (1) is provided with a substrate holder (22) for holding rotatably the substrate (21) in the surface direction of the processing surface of the substrate; a substrate magnetic field forming device (30) which is disposed to surround the substrate (21) and forms a magnetic field on the processing surface of the substrate (21); cathodes (41) which are arranged diagonally above the substrate (21) and are supplied with electric discharge power; a position detecting device (23) for detecting a rotation position of the substrate (21); and a control device (50) which adjusts the rotation speed of the substrate (21) in accordance with the rotation position detected by the position detecting device (23).

    Abstract translation: 当通过在基板（21）的处理表面上形成磁场并且通过使用高放电电力进行倾斜入射溅射形成膜时，形成膜厚度或薄层电阻的面内分布均匀性优异的磁性膜。 溅射装置（1）设置有用于在基板的处理表面的表面方向上可旋转地保持基板（21）的基板保持器（22） 衬底磁场形成装置（30），被设置为围绕所述衬底（21）并在所述衬底（21）的所述处理表面上形成磁场; 在基板（21）上方对角配置并供给放电电力的阴极（41） 位置检测装置，用于检测所述基板的旋转位置; 以及根据由位置检测装置（23）检测到的旋转位置来调整基板（21）的转速的控制装置（50）。

    SPUTTERING DEVICE AND SPUTTERING METHOD
    2.
    发明申请
    SPUTTERING DEVICE AND SPUTTERING METHOD 有权
    溅射装置和溅射方法

    公开(公告)号：US20110223346A1

    公开(公告)日：2011-09-15

    申请号：US13121338

    申请日：2009-09-29

    Applicant: Toru Kitada ,  Naoki Watanabe ,  Motonobu Nagai ,  Masahiro Suenaga ,  Takeo Konno

    Inventor： Toru Kitada ,  Naoki Watanabe ,  Motonobu Nagai ,  Masahiro Suenaga ,  Takeo Konno

    IPC: C23C14/35 ,  B05C9/02

    CPC classification number: C23C14/542 ,  C23C14/3464 ,  H01F41/18 ,  H01J37/3266 ,  H01J37/32733 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3414

    Abstract: A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate (21) and performing oblique incidence sputtering by using high discharge power.A sputtering apparatus (1) is provided with a substrate holder (22) for holding rotatably the substrate (21) in the surface direction of the processing surface of the substrate; a substrate magnetic field forming device (30) which is disposed to surround the substrate (21) and forms a magnetic field on the processing surface of the substrate (21); cathodes (41) which are arranged diagonally above the substrate (21) and are supplied with electric discharge power; a position detecting device (23) for detecting a rotation position of the substrate (21) ; and a control device (50) which adjusts the rotation speed of the substrate (21) in accordance with the rotation position detected by the position detecting device (23).

    Abstract translation: 当通过在基板（21）的处理表面上形成磁场并且通过使用高放电电力进行倾斜入射溅射形成膜时，形成膜厚度或薄层电阻的面内分布均匀性优异的磁性膜。 溅射装置（1）设置有用于在基板的处理表面的表面方向上可旋转地保持基板（21）的基板保持器（22） 衬底磁场形成装置（30），被设置为围绕所述衬底（21）并在所述衬底（21）的所述处理表面上形成磁场; 在基板（21）上方对角配置并供给放电电力的阴极（41） 位置检测装置，用于检测所述基板的旋转位置; 以及根据由位置检测装置（23）检测到的旋转位置来调整基板（21）的转速的控制装置（50）。

    Manufacturing apparatus of magnetoresistance elements
    3.
    发明授权
    Manufacturing apparatus of magnetoresistance elements 有权
    磁阻元件制造装置

    公开(公告)号：US07731825B2

    公开(公告)日：2010-06-08

    申请号：US11161981

    申请日：2005-08-24

    Applicant: Toru Kitada ,  Naoki Watanabe ,  Shinji Takagi ,  Shinji Furukawa

    Inventor： Toru Kitada ,  Naoki Watanabe ,  Shinji Takagi ,  Shinji Furukawa

    IPC: C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/00

    CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/228 ,  C23C14/35 ,  H01F41/18 ,  H01F41/302

    Abstract: A manufacturing method of a magnetoresistance element having a pinned magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer, the method includes forming at least one thin film of the non-magnetic intermediate layer and the free magnetic layer at a pressure of 8.0×10−3 Pa or less in the vicinity of a substrate using a sputtering apparatus. The apparatus includes a vacuum chamber in which a cathode and a substrate holder are arranged, a first exhausting apparatus connected to an exhausting port of the vacuum chamber, a gas introduction mechanism to introduce a gas toward the target, a first pressure regulator to cause a pressure difference between a target space and a center space outside the target space, a second pressure regulator to cause a pressure difference between the center space and a substrate space, and a second exhausting apparatus to exhaust the center space.

    Abstract translation: 一种具有钉扎磁性层，非磁性中间层和自由磁性层的磁阻元件的制造方法，所述方法包括在压力下形成至少一个非磁性中间层和自由磁性层的薄膜 在使用溅射装置的基板附近为8.0×10 -3 Pa以下。 该装置包括：真空室，其中布置有阴极和基板保持器;第一排气装置，连接到真空室的排气口;气体导入机构，用于将气体引向目标;第一压力调节器， 目标空间与目标空间外的中心空间之间的压力差，使中心空间与基板空间之间产生压力差的第二压力调节器，以及排出中心空间的第二排气装置。

    MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF MAGNETORESISTANCE ELEMENTS
    6.
    发明申请
    MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF MAGNETORESISTANCE ELEMENTS 审中-公开
    磁性元件的制造方法和制造装置

    公开(公告)号：US20090139855A1

    公开(公告)日：2009-06-04

    申请号：US12273891

    申请日：2008-11-19

    Applicant: Toru Kitada ,  Naoki Watanabe ,  Shinji Takagi ,  Shinji Furukawa

    Inventor： Toru Kitada ,  Naoki Watanabe ,  Shinji Takagi ,  Shinji Furukawa

    IPC: C23C14/34

    CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/228 ,  C23C14/35 ,  H01F41/18 ,  H01F41/302

    Abstract: A manufacturing method of a magnetoresistance element having a pinned magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer, the method includes forming at least one thin film of the non-magnetic intermediate layer and the free magnetic layer at a pressure of 8.0×10−3 Pa or less in the vicinity of a substrate using a sputtering apparatus. The apparatus includes a vacuum chamber in which a cathode and a substrate holder are arranged, a first exhausting apparatus connected to an exhausting port of the vacuum chamber, a gas introduction mechanism to introduce a gas toward the target, a first pressure regulator to cause a pressure difference between a target space and a center space outside the target space, a second pressure regulator to cause a pressure difference between the center space and a substrate space, and a second exhausting apparatus to exhaust the center space.

    Abstract translation: 一种具有钉扎磁性层，非磁性中间层和自由磁性层的磁阻元件的制造方法，所述方法包括在压力下形成至少一个非磁性中间层和自由磁性层的薄膜 在使用溅射装置的基板附近为8.0×10 -3 Pa以下。 该装置包括：真空室，其中布置有阴极和基板保持器;第一排气装置，连接到真空室的排气口;气体导入机构，用于将气体引向目标;第一压力调节器， 目标空间与目标空间外的中心空间之间的压力差，使中心空间与基板空间之间产生压力差的第二压力调节器，以及排出中心空间的第二排气装置。

    Manufacturing Method And Manufacturing Apparatus Of Magnetoresistance Elements
    7.
    发明申请
    Manufacturing Method And Manufacturing Apparatus Of Magnetoresistance Elements 有权
    磁阻元件的制造方法和制造装置

    公开(公告)号：US20060060466A1

    公开(公告)日：2006-03-23

    申请号：US11161981

    申请日：2005-08-24

    Applicant: Toru Kitada ,  Naoki Watanabe ,  Shinji Takagi ,  Shinji Furukawa

    Inventor： Toru Kitada ,  Naoki Watanabe ,  Shinji Takagi ,  Shinji Furukawa

    IPC: C23C14/00 ,  C23C14/32

    CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/228 ,  C23C14/35 ,  H01F41/18 ,  H01F41/302

    Abstract: A manufacturing method of a magnetoresistance element having a pinned magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer, the method includes forming at least one thin film of the non-magnetic intermediate layer and the free magnetic layer at a pressure of 8.0×10−3 Pa or less in the vicinity of a substrate using a sputtering apparatus. The apparatus includes a vacuum chamber in which a cathode and a substrate holder are arranged, a first exhausting apparatus connected to an exhausting port of the vacuum chamber, a gas introduction mechanism to introduce a gas toward the target, a first pressure regulator to cause a pressure difference between a target space and a center space outside the target space, a second pressure regulator to cause a pressure difference between the center space and a substrate space, and a second exhausting apparatus to exhaust the center space.

    Abstract translation: 一种具有钉扎磁性层，非磁性中间层和自由磁性层的磁阻元件的制造方法，所述方法包括在压力下形成至少一个非磁性中间层和自由磁性层的薄膜 使用溅射装置在基板附近的8.0×10 -3 Pa以下。 该装置包括：真空室，其中布置有阴极和基板保持器;第一排气装置，连接到真空室的排气口;气体导入机构，用于将气体引向目标;第一压力调节器， 目标空间与目标空间外的中心空间之间的压力差，使中心空间与基板空间之间产生压力差的第二压力调节器，以及排出中心空间的第二排气装置。

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