发明申请
US20110223744A1 METHOD FOR MANUFACTURING AN OPTICAL SEMICONDUCTOR DEVICE AND COMPOSITION FOR FORMING A PROTECTIVE LAYER OF AN OPTICAL SEMICONDUCTOR DEVICE
审中-公开
用于制造光学半导体器件的方法和用于形成光学半导体器件的保护层的组合物
- 专利标题： METHOD FOR MANUFACTURING AN OPTICAL SEMICONDUCTOR DEVICE AND COMPOSITION FOR FORMING A PROTECTIVE LAYER OF AN OPTICAL SEMICONDUCTOR DEVICE
- 专利标题（中）： 用于制造光学半导体器件的方法和用于形成光学半导体器件的保护层的组合物
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申请号： US12892193申请日： 2010-09-28
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公开(公告)号： US20110223744A1公开(公告)日： 2011-09-15
- 发明人: Yohei NOBE , Hitoshi Kato , Kunpei Kobayashi , Koji Sumiya , Chiaki Miyamoto , Terukazu Kokubo
- 申请人： Yohei NOBE , Hitoshi Kato , Kunpei Kobayashi , Koji Sumiya , Chiaki Miyamoto , Terukazu Kokubo
- 申请人地址： JP Tokyo
- 专利权人： JSR CORPORATION
- 当前专利权人： JSR CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-223669 20090929; JP2010-189838 20100826
- 主分类号： H01L21/78
- IPC分类号： H01L21/78 ; C08L83/04
摘要：
Provided is a composition for forming a protective layer which has an excellent acid resistance, an excellent cracking resistance and does not adversely affect semiconductor layers even when acid is used to remove deposits that arise during formation of separation trenches for separating a substrate into device units. Also provided is a method for manufacturing an optical semiconductor device using such a composition. The composition for forming a protective layer includes a siloxane polymer and an organic solvent. The method for manufacturing an optical semiconductor device includes the steps of: forming a protective layer 4 by coating a surface of semiconductor layers 2 and 3 formed on a substrate 1 with a composition for forming a protective layer; forming separation trenches 6 by irradiating the protective layer 4 from above with a laser; and removing deposits that arise during formation of the separation trenches 6.
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