发明申请
- 专利标题: DIELECTRIC DEPOSITION USING A REMOTE PLASMA SOURCE
- 专利标题(中): 使用远程等离子体源进行介电沉积
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申请号: US13069205申请日: 2011-03-22
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公开(公告)号: US20110226617A1公开(公告)日: 2011-09-22
- 发明人: Ralf Hofmann , Majeed A. Foad
- 申请人: Ralf Hofmann , Majeed A. Foad
- 申请人地址: US CA Santa Clara
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: C23C14/34
- IPC分类号: C23C14/34 ; C23C14/35 ; C23C14/06 ; C23C14/46
摘要:
A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a sputter target and a substrate holder within the vacuum chamber, and a plasma source attached to the vacuum chamber and positioned remotely from the sputter target, the plasma source being configured to form a high density plasma beam extending into the vacuum chamber. The plasma source may include a rectangular cross-section source chamber, an electromagnet, and a radio frequency coil, wherein the rectangular cross-section source chamber and the radio frequency coil are configured to give the high density plasma beam an elongated ovate cross-section. Furthermore, the surface of the sputter target may be configured in a non-planar form to provide uniform plasma energy deposition into the target and/or uniform sputter deposition at the surface of a substrate on the substrate holder. The sputter deposition system may include a plasma spreading system for reshaping the high density plasma beam for complete and uniform coverage of the sputter target.
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