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    COOLING RING FOR PHYSICAL VAPOR DEPOSITION CHAMBER TARGET
    2.
    发明申请
    COOLING RING FOR PHYSICAL VAPOR DEPOSITION CHAMBER TARGET 有权
    用于物理蒸气沉积室目标的冷却环

    公开(公告)号：US20130056347A1

    公开(公告)日：2013-03-07

    申请号：US13584972

    申请日：2012-08-14

    申请人： BRIAN WEST ,  GOICHI YOSHIDOME ,  RALF HOFMANN

    发明人： BRIAN WEST ,  GOICHI YOSHIDOME ,  RALF HOFMANN

    IPC分类号： C23C14/35

    CPC分类号： C23C14/3407 ,  H01J37/3414 ,  H01J37/3497

    摘要： Apparatus and method for physical vapor deposition are provided. In some embodiments, a cooling ring to cool a target in a physical vapor deposition chamber may include an annular body having a central opening; an inlet port coupled to the body; an outlet port coupled to the body; a coolant channel disposed in the body and having a first end coupled to the inlet port and a second end coupled to the outlet port; and a cap coupled to the body and substantially spanning the central opening, wherein the cap includes a center hole.

    摘要翻译： 提供了用于物理气相沉积的装置和方法。 在一些实施例中，用于冷却物理气相沉积室中的靶的冷却环可以包括具有中心开口的环形体; 连接到所述主体的入口端口; 连接到所述主体的出口; 冷却剂通道，其设置在所述主体中并且具有联接到所述入口的第一端和联接到所述出口的第二端; 以及联接到所述主体并且基本跨越所述中心开口的盖，其中所述盖包括中心孔。

    Alkali Metal Deposition System
    3.
    发明申请
    Alkali Metal Deposition System 审中-公开
    碱金属沉积系统

    公开(公告)号：US20120152727A1

    公开(公告)日：2012-06-21

    申请号：US13301718

    申请日：2011-11-21

    申请人： Byung Sung Kwak ,  Stefan Bangert ,  Michael Koenig ,  Florian Ries ,  Ralf Hofmann

    发明人： Byung Sung Kwak ,  Stefan Bangert ,  Michael Koenig ,  Florian Ries ,  Ralf Hofmann

    IPC分类号： C23C14/34

    CPC分类号： C23C14/564 ,  C23C14/3407 ,  H01J37/34 ,  H01J37/3426

    摘要： A deposition system for alkali and alkaline earth metals may include a metal sputter target including cooling channels, a substrate holder configured to hold a substrate facing and parallel to the metal sputter target, and multiple power sources configured to apply energy to a plasma ignited between the substrate and the metal sputter target. The target may have a cover configured to fit over the target material, the cover may include a handle for automated removal and replacement of the cover within the deposition system, and a valve for providing access to the volume between the target material and the cover for pumping, purging or pressurizing the gas within the volume. Sputter gas may include noble gas with an atomic weight less than that of the metal target.

    摘要翻译： 用于碱金属和碱土金属的沉积系统可以包括包括冷却通道的金属溅射靶，被配置为保持面向并平行于金属溅射靶的衬底的衬底保持器，以及被配置为将能量施加到在 基板和金属溅射靶。 目标物可以具有被配置成装配在目标材料上的盖，盖可以包括用于在沉积系统内自动移除和更换盖的手柄，以及用于提供对目标材料和盖之间的体积的通路的阀，用于 泵送，清洗或加压体积内的气体。 溅射气体可以包括原子量小于金属靶的原子量的惰性气体。

    CARBON NANOTUBE-BASED SOLAR CELLS
    4.
    发明申请
    CARBON NANOTUBE-BASED SOLAR CELLS 有权
    基于碳纳米管的太阳能电池

    公开(公告)号：US20100313951A1

    公开(公告)日：2010-12-16

    申请号：US12797529

    申请日：2010-06-09

    申请人： Omkaram Nalamasu ,  Charles Gay ,  Victor L. Pushparaj ,  Kaushal K. Singh ,  Robert J. Visser ,  Majeed A. Foad ,  Ralf Hofmann

    发明人： Omkaram Nalamasu ,  Charles Gay ,  Victor L. Pushparaj ,  Kaushal K. Singh ,  Robert J. Visser ,  Majeed A. Foad ,  Ralf Hofmann

    IPC分类号： H01L31/04 ,  H01L31/18 ,  C23C16/22

    CPC分类号： H01L31/022425 ,  B82Y10/00 ,  H01L31/0322 ,  H01L31/03529 ,  H01L31/0384 ,  H01L31/0749 ,  H01L51/0048 ,  H01L51/4213 ,  Y02E10/541 ,  Y02P70/521

    摘要： Solar cells are provided with carbon nanotubes (CNTs) which are used: to define a micron/sub-micron geometry of the solar cells; and/or as charge transporters for efficiently removing charge carriers from the absorber layer to reduce the rate of electron-hole recombination in the absorber layer. A solar cell may comprise: a substrate; a multiplicity of areas of metal catalyst on the surface of the substrate; a multiplicity of carbon nanotube bundles formed on the multiplicity of areas of metal catalyst, each bundle including carbon nanotubes aligned roughly perpendicular to the surface of the substrate; and a photoactive solar cell layer formed over the carbon nanotube bundles and exposed surfaces of the substrate, wherein the photoactive solar cell layer is continuous over the carbon nanotube bundles and the exposed surfaces of the substrate. The photoactive solar cell layer may be comprised of amorphous silicon p/i/n thin films; although, concepts of the present invention are also applicable to solar cells with absorber layers of microcrystalline silicon, SiGe, carbon doped microcrystalline silicon, CIS, CIGS, CISSe and various p-type II-VI binary compounds and ternary and quaternary compounds.

    摘要翻译： 太阳能电池提供有碳纳米管（CNT），其用于限定太阳能电池的微米/亚微米几何形状; 和/或作为电荷转运体，用于从吸收层有效去除电荷载体以降低吸收层中电子 - 空穴复合的速率。 太阳能电池可以包括：基底; 在基材表面上的金属催化剂的多个区域; 形成在金属催化剂的多个区域上的多个碳纳米管束，每个束包括大致垂直于基板的表面排列的碳纳米管; 以及形成在所述碳纳米管束和所述基板的露出表面上的光活性太阳能电池层，其中所述光电太阳能电池层在所述碳纳米管束和所述基板的暴露表面上连续。 光电太阳能电池层可以由非晶硅p / i / n薄膜组成; 尽管本发明的概念也适用于具有微晶硅，SiGe，碳掺杂微晶硅，CIS，CIGS，CISSe和各种p型II-VI二元化合物和三元和四元化合物的吸收层的太阳能电池。

    COAXIAL MICROWAVE ASSISTED DEPOSITION AND ETCH SYSTEMS
    5.
    发明申请
    COAXIAL MICROWAVE ASSISTED DEPOSITION AND ETCH SYSTEMS 审中-公开
    同轴微波辅助沉积和蚀刻系统

    公开(公告)号：US20090238998A1

    公开(公告)日：2009-09-24

    申请号：US12050373

    申请日：2008-03-18

    申请人： MICHAEL W. STOWELL ,  Nety Krishna ,  Ralf Hofmann ,  Joe Griffith

    发明人： MICHAEL W. STOWELL ,  Nety Krishna ,  Ralf Hofmann ,  Joe Griffith

    IPC分类号： H05H1/30 ,  C23C16/511 ,  H01L21/3065

    CPC分类号： H05H1/46 ,  C23C14/34 ,  C23C14/345 ,  C23C14/3485 ,  C23C16/511 ,  C23C16/515 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3408

    摘要： Disclosed are systems for achieving improved film properties by introducing additional processing parameters, such as a movable position for the microwave source and pulsing power to the microwave source, and extending the operational ranges and processing windows with the assistance of the microwave source. A coaxial microwave antenna is used for radiating microwaves to assist in physical vapor deposition (PVD) or chemical vapor deposition (CVD) systems. The system may use a coaxial microwave antenna inside a processing chamber, with the antenna being movable between a substrate and a plasma source, such as a sputtering target, a planar capacitively generated plasma source, or an inductively coupled source. In a special case when only a microwave plasma source is present, the position of the microwave antenna is movable relative to a substrate. The coaxial microwave antenna adjacent to the plasma source can assist the ionization more homogeneously and allow substantially uniform deposition over large areas.

    摘要翻译： 公开了通过引入诸如用于微波源的可移动位置和对微波源的脉冲功率的附加处理参数以及在微波源的辅助下延伸操作范围和处理窗口来实现改进的膜性质的系统。 同轴微波天线用于辐射微波以辅助物理气相沉积（PVD）或化学气相沉积（CVD）系统。 该系统可以在处理室内使用同轴微波天线，天线可在基板和等离子体源之间移动，诸如溅射靶，平面电容产生的等离子体源或电感耦合源。 在仅存在微波等离子体源的特殊情况下，微波天线的位置可相对于基板移动。 与等离子体源相邻的同轴微波天线可以更均匀地帮助电离并且允许在大面积上的基本均匀的沉积。

    Physical vapor deposition plasma reactor with VHF source power applied through the workpiece
    6.
    发明申请
    Physical vapor deposition plasma reactor with VHF source power applied through the workpiece 有权
    具有通过工件施加VHF源功率的物理气相沉积等离子体反应器

    公开(公告)号：US20060169576A1

    公开(公告)日：2006-08-03

    申请号：US11140514

    申请日：2005-05-25

    申请人： Karl Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann ,  Wei Wang ,  Semyon Sherstinsky

    发明人： Karl Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann ,  Wei Wang ,  Semyon Sherstinsky

    IPC分类号： C23C14/00

    CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

    摘要： A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet, a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency in a range between about 60 MHz and 81 MHz, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.

    摘要翻译： 物理气相沉积等离子体反应器包括真空室，其包括侧壁，天花板和靠近室底部的晶片支撑基座，以及耦合到该室的真空泵，耦合到该室的工艺气体入口和工艺气体源 耦合到处理气体入口，在天花板处的金属溅射靶，耦合到溅射靶的高压DC源，耦合到晶片支撑基座的RF等离子体源功率发生器，其频率在约60MHz和 81MHz，以及RF等离子体偏置功率发生器，其耦合到晶片支撑基座并且具有适于将能量耦合到等离子体离子的频率。

    Apparatus and method for sputtering ionized material in a plasma
    8.
    发明授权
    Apparatus and method for sputtering ionized material in a plasma 失效
    用于在等离子体中溅射电离材料的装置和方法

    公开(公告)号：US06132566A

    公开(公告)日：2000-10-17

    申请号：US126357

    申请日：1998-07-30

    申请人： Ralf Hofmann ,  John C. Forster

    发明人： Ralf Hofmann ,  John C. Forster

    IPC分类号： C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  C23C14/34

    CPC分类号： H01J37/32477 ,  C23C14/358 ,  C23C14/564 ,  H01J37/321 ,  Y10S156/916

    摘要： An external inductive coil is used in a plasma process system having a dielectric shield which separates the coil from the plasma. The shield includes channels provided along the inner side of the shield facing the plasma region. The channels inhibit the formation of a continuous metal film over the inner surface of the shield during sputtering and deposition. The sidewalls defining the channels permit RF transmission after the surfaces directly facing the plasma are coated with metal.

    摘要翻译： 在具有将线圈与等离子体分离的介电屏蔽的等离子体处理系统中使用外部感应线圈。 护罩包括沿着屏蔽物的面向等离子体区域的内侧设置的通道。 在溅射和沉积期间，通道阻止在屏蔽的内表面上形成连续的金属膜。 限定通道的侧壁在直接面向等离子体的表面被金属涂覆之后允许RF传输。

    Apparatus and method for enhancing uniformity of a metal film formed on a substrate with the aid of an inductively coupled plasma
    9.
    发明授权
    Apparatus and method for enhancing uniformity of a metal film formed on a substrate with the aid of an inductively coupled plasma 失效
    借助电感耦合等离子体增强在基片上形成的金属膜的均匀性的装置和方法

    公开(公告)号：US5902461A

    公开(公告)日：1999-05-11

    申请号：US922893

    申请日：1997-09-03

    申请人： Zheng Xu ,  Ralf Hofmann

    发明人： Zheng Xu ,  Ralf Hofmann

    IPC分类号： C23C14/35 ,  H01J37/32 ,  C23C14/34

    CPC分类号： H01J37/321 ,  C23C14/35 ,  C23C14/358 ,  H01J37/3266

    摘要： An apparatus and method for sputtering ionized material onto a substrate with the aid of an inductively coupled plasma which ionizes the material, which apparatus includes: a support member having a support surface for supporting a substrate; a target constituting a source of sputtering material; a coil for generating a plasma which is inductively coupled to the coil and which ionizes material sputtered from the target; and components for piacing the support member at a potential which causes ionized material to be attracted to the support member. Magnets are provided to generate a magnetic field which is defined by magnetic field lines that lie in planes substantially perpendicular to the support surface and which have a constant polarity around the support surface.

    摘要翻译： 借助于电离所述材料的电感耦合等离子体将离子化材料溅射到基底上的装置和方法，该装置包括：具有用于支撑基底的支撑表面的支撑构件; 构成溅射材料源的靶; 用于产生等离子体的线圈，所述等离子体感应耦合到所述线圈并且电离从所述靶溅射的材料; 以及用于在使电离材料被吸引到支撑构件的电位下引导支撑构件的部件。 提供磁体以产生由位于基本上垂直于支撑表面的平面中并且在支撑表面周围具有恒定极性的磁场线限定的磁场。