发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- 专利标题（中）： 非易失性半导体存储器件
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申请号： US12839895申请日： 2010-07-20
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公开(公告)号： US20110233644A1公开(公告)日： 2011-09-29
- 发明人: Yoshiaki FUKUZUMI , Ryota Katsumata , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Hideaki Aochi
- 申请人： Yoshiaki FUKUZUMI , Ryota Katsumata , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Hideaki Aochi
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-067582 20100324
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
According to one embodiment, a nonvolatile semiconductor memory device includes first and second stacked structural bodies, first and second semiconductor pillars, a memory unit connection portion, a selection unit stacked structural body, first and second selection unit semiconductor pillars, a selection unit connection portion, and first to fifth interconnections. The semiconductor pillars pierce the stacked structural bodies. The first and second interconnections are connected to the first and second semiconductor pillars, respectively. The memory unit connection portion connects the first and second semiconductor pillars. The selection unit semiconductor pillars pierce the selection unit stacked structural body. The third and fourth interconnections are connected to the first and second selection unit semiconductor pillars, respectively. The selection unit connection portion connects the first and second selection unit semiconductor pillars. The fifth interconnection is connected to the third interconnection on a side opposite to the selection unit stacked structural body.
公开/授权文献
- US08350326B2 Nonvolatile semiconductor memory device 公开/授权日：2013-01-08
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