发明申请
- 专利标题: SRAM WRITING SYSTEM AND RELATED APPARATUS
- 专利标题(中): SRAM写入系统及相关设备
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申请号: US13070977申请日: 2011-03-24
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公开(公告)号: US20110235444A1公开(公告)日: 2011-09-29
- 发明人: Ching-Te Chuang , Wei-Chiang Shih , Hung-Yu Lee , Jihi-Yu Lin , Ming-Hsien Tu , Shyh-Jye Jou , Kun-Di Lee
- 申请人: Ching-Te Chuang , Wei-Chiang Shih , Hung-Yu Lee , Jihi-Yu Lin , Ming-Hsien Tu , Shyh-Jye Jou , Kun-Di Lee
- 申请人地址: TW Hsinchu
- 专利权人: FARADAY TECHNOLOGY CORPORATION
- 当前专利权人: FARADAY TECHNOLOGY CORPORATION
- 当前专利权人地址: TW Hsinchu
- 优先权: TW99108935 20100325
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
SRAM writing system and related apparatus are provided. The writing system of the invention has a dummy replica writing circuit, a negative pulse controller and at least a normal writing circuit; each normal writing circuit includes a write driver and a negative pulse supplier. While writing, the dummy replica writing circuit drives a dummy replica bit-line, such that the negative pulse controller generates a negative pulse control signal according to level of the dummy replica bit-line. In each writing circuit, when the write driver conducts to connect an associated bit-line to a bias end for driving a level transition, the negative pulse supplier switches the bias end from an operation voltage to a different negative pulse voltage according to the received negative pulse control signal.
公开/授权文献
- US08325512B2 SRAM writing system and related apparatus 公开/授权日:2012-12-04
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