发明申请
- 专利标题： PLASMA PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- 专利标题（中）： 等离子体加工设备和半导体器件制造方法
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申请号： US13075634申请日： 2011-03-30
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公开(公告)号： US20110240221A1公开(公告)日： 2011-10-06
- 发明人: Takashi Yamamoto , Shunsuke Mizukami , Ryuji Ohtani , Kimihiro Higuchi
- 申请人： Takashi Yamamoto , Shunsuke Mizukami , Ryuji Ohtani , Kimihiro Higuchi
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-077282 20100330
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H05H1/24 ; H01L21/00
摘要：
A plasma processing apparatus includes a processing chamber; a lower electrode provided in the processing chamber and having a base made of a conductive metal to which a high frequency power is applied, the lower electrode also serving as a mounting table for mounting thereon a target substrate; an upper electrode provided in the processing chamber to face the lower electrode; and a focus ring disposed above the lower electrode to surround the target substrate. An electrical connection mechanism is provided between the base of the lower electrode and the focus ring to electrically connect the base of the lower electrode to the focus ring through a current control element, and generates a DC current in accordance with a potential difference.
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