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公开(公告)号：US07541283B2
公开(公告)日：2009-06-02
申请号：US11066260
申请日：2005-02-28
申请人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
IPC分类号： H01L21/44
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译： 一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电 用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。 此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。
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公开(公告)号：US08343372B2
公开(公告)日：2013-01-01
申请号：US12057975
申请日：2008-03-28
CPC分类号： H01L21/67103 , H01L21/6875
摘要： A surface processing method for a mounting stage, which enables a mounting surface conforming to a substrate to be formed while saving time and effort. The substrate is mounted on a mounting surface of the mounting stage disposed in a housing chamber of a substrate processing apparatus that carries out plasma processing on the substrate. The mounted substrate is thermally expanded.
摘要翻译： 一种用于安装台的表面处理方法，其能够在节省时间和精力的同时形成符合基板的安装表面。 基板安装在安装台的安装表面上，该安装台设置在基板处理设备的容纳室中，该基板处理设备在基板上执行等离子体处理。 安装的基板被热膨胀。
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公开(公告)号：US08287750B2
公开(公告)日：2012-10-16
申请号：US12686899
申请日：2010-01-13
申请人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译： 一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电 用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。 此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。
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公开(公告)号：US08056503B2
公开(公告)日：2011-11-15
申请号：US10483251
申请日：2002-07-02
申请人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
发明人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
CPC分类号： H01J37/32724 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J37/3411 , H01J2237/002 , H01J2237/0206 , H01J2237/334 , H01L21/67069
摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。
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5.发明申请公开(公告)号：US20110240221A1
公开(公告)日：2011-10-06
申请号：US13075634
申请日：2011-03-30
IPC分类号： H01L21/306 , H05H1/24 , H01L21/00
CPC分类号： H01L21/6831 , C23C16/507 , C23C16/509 , C23C16/5093 , H01J37/32091 , H01J37/32165 , H01J37/32642 , H01L21/67103 , H01L21/67109 , Y10T29/41
摘要： A plasma processing apparatus includes a processing chamber; a lower electrode provided in the processing chamber and having a base made of a conductive metal to which a high frequency power is applied, the lower electrode also serving as a mounting table for mounting thereon a target substrate; an upper electrode provided in the processing chamber to face the lower electrode; and a focus ring disposed above the lower electrode to surround the target substrate. An electrical connection mechanism is provided between the base of the lower electrode and the focus ring to electrically connect the base of the lower electrode to the focus ring through a current control element, and generates a DC current in accordance with a potential difference.
摘要翻译： 等离子体处理装置包括处理室; 设置在处理室中的下电极，具有由导电金属制成的基座，高频电源施加到该底座，下电极也用作用于安装目标衬底的安装台; 设置在所述处理室中以与所述下电极相对的上电极; 以及设置在所述下电极上方以围绕所述目标基板的聚焦环。 电连接机构设置在下电极的底座和聚焦环之间，通过电流控制元件将下电极的底座与聚焦环电连接，并根据电位差产生直流电流。
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公开(公告)号：US07465673B2
公开(公告)日：2008-12-16
申请号：US10736782
申请日：2003-12-17
申请人： Yoshiki Igarashi , Kouichiro Inazawa , Kimihiro Higuchi , Vaidyanathan Balasubramaniam , Eiichi Nishimura , Ralph Kim , Philip Sansone , Masaaki Hagihara
发明人： Yoshiki Igarashi , Kouichiro Inazawa , Kimihiro Higuchi , Vaidyanathan Balasubramaniam , Eiichi Nishimura , Ralph Kim , Philip Sansone , Masaaki Hagihara
IPC分类号： H01L21/00
CPC分类号： H01L21/31138 , G03F7/091 , H01L21/31144 , H01L21/76802
摘要： A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O); forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute an NH3/O2, N2/H2/O2, N2/H2/CO, NH3/CO, or NH3/CO/O2 based chemistry. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O).
摘要翻译： 一种用于在等离子体处理系统中蚀刻衬底上的有机抗反射涂层（ARC）层的方法，包括：引入包含氮（N），氢（H）和氧（O）的工艺气体; 从工艺气体形成等离子体; 并将衬底暴露于等离子体。 工艺气体可以例如构成基于NH 3 / O 2，N 2 / H 2 / O 2，N 2 / H 2 / CO，NH 3 / CO或NH 3 / CO / O 2的化学。 另外，工艺化学可以进一步包括添加氦。 本发明还提供一种用于形成用于在衬底上蚀刻薄膜的双层掩模的方法，其中所述方法包括：在所述衬底上形成所述薄膜; 在薄膜上形成ARC层; 在ARC层上形成光刻胶图案; 以及使用包含氮（N），氢（H）和氧（O）的工艺气体的蚀刻工艺将光致抗蚀剂图案转移到ARC层。
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公开(公告)号：US06676804B1
公开(公告)日：2004-01-13
申请号：US09720910
申请日：2001-01-02
IPC分类号： H05H100
CPC分类号： H01L21/6831 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67248 , Y10S156/915
摘要： An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.
摘要翻译： 静电吸盘108设置在设置在蚀刻装置100的处理室102内的下电极106上，并且导电内环体112a和绝缘外环体112b包围安装在卡盘上的晶片W的外边缘 表面。 晶片W和内外环体112a和112b的温度由第一至第三温度传感器142,144和146检测。控制器140控制供应给晶片W的中心之间的空间的He的压力水平 以及静电卡盘108经由第一气体出口管道114以及经由第二气体出口管道116和晶片W的外边缘与静电卡盘108之间的空间以及外环体112b内的加热器148产生的热量 基于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。
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公开(公告)号：US08387562B2
公开(公告)日：2013-03-05
申请号：US13242851
申请日：2011-09-23
申请人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
发明人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
CPC分类号： H01J37/32724 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J37/3411 , H01J2237/002 , H01J2237/0206 , H01J2237/334 , H01L21/67069
摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。
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公开(公告)号：US07799238B2
公开(公告)日：2010-09-21
申请号：US12433112
申请日：2009-04-30
申请人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译： 一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电 用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。 此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。
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公开(公告)号：US20090212017A1
公开(公告)日：2009-08-27
申请号：US12433112
申请日：2009-04-30
申请人： Toshihiko SHINDO , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko SHINDO , Shin Okamoto , Kimihiro Higuchi
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译： 一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电 用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。 此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。
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