发明申请
- 专利标题： Semiconductor Device with a Buried Stressor
- 专利标题（中）： 具有埋入应力的半导体器件
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申请号： US12750160申请日： 2010-03-30
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公开(公告)号： US20110241084A1公开(公告)日： 2011-10-06
- 发明人: Zhiqiang Wu , Jeffrey Junhao Xu , Chih-Hao Chang , Wen-Hsing Hsieh
- 申请人： Zhiqiang Wu , Jeffrey Junhao Xu , Chih-Hao Chang , Wen-Hsing Hsieh
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A semiconductor device, such as a PMOS or NMOS device, having localized stressors is provided. Recesses are formed on opposing sides of a gate electrode. A stress-inducing region is formed along a bottom of the recess, and a stressed layer is formed over the stress-inducing region. By having a stress-inducing region with a larger lattice structure than the stressed layer, a tensile strain may be created in a channel region of the semiconductor device and may be suitable for an NMOS device. By having a stress-inducing region with a smaller lattice structure than the stressed layer, a compressive strain may be created in the channel region of the semiconductor device and may be suitable for a PMOS device. Embodiments may be applied to various types of substrates and semiconductor devices, such as planar transistors and finFETs.
公开/授权文献
- US08338259B2 Semiconductor device with a buried stressor 公开/授权日：2012-12-25
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