发明申请
- 专利标题: Continuously Optimized Solar Cell Metallization Design through Feed-Forward Process
- 专利标题(中): 通过前馈过程持续优化太阳能电池金属化设计
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申请号: US12754712申请日: 2010-04-06
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公开(公告)号: US20110244625A1公开(公告)日: 2011-10-06
- 发明人: Benjamin Riordon , Russell Low , Atul Gupta , William Weaver
- 申请人: Benjamin Riordon , Russell Low , Atul Gupta , William Weaver
- 申请人地址: US MA Gloucester
- 专利权人: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01L31/18
- IPC分类号: H01L31/18
摘要:
An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created and imaging is used to determine the appropriate metallization layer.
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