发明申请
US20110249247A1 Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method
有权
检验方法和装置,平版印刷设备,平版印刷加工单元和器件制造方法
- 专利标题: Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method
- 专利标题(中): 检验方法和装置,平版印刷设备,平版印刷加工单元和器件制造方法
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申请号: US13140292申请日: 2009-12-17
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公开(公告)号: US20110249247A1公开(公告)日: 2011-10-13
- 发明人: Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
- 申请人: Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
- 申请人地址: NL VELDHOVEN
- 专利权人: ASML NETHERLANDS B.V.
- 当前专利权人: ASML NETHERLANDS B.V.
- 当前专利权人地址: NL VELDHOVEN
- 国际申请: PCT/EP09/67403 WO 20091217
- 主分类号: G03B27/52
- IPC分类号: G03B27/52 ; B32B3/00 ; G03F1/00
摘要:
In order to determine whether an exposure apparatus is outputting the correct dose of radiation and a projection system of the exposure apparatus is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker may be measured by an inspection apparatus, such as, for example, a scatterometer to determine whether errors in focus, dose, and other related properties are present. The test pattern is arranged such that changes in focus and dose may be easily determined by measuring properties of a pattern that is exposed using the mask. The test pattern of the mask is arranged so that it gives rise to a marker pattern on the substrate surface. The marker pattern contains structures that have at least two measurable side wall angles. Asymmetry between side wall angles of a structure is related to focus (or defocus) of the exposure radiation from the exposure apparatus. The extent of defocus may thereby be determined by measuring an asymmetry in side wall angle of the printed marker pattern structures.
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