发明申请
- 专利标题： METHOD FOR FABRICATING MEMORY
- 专利标题（中）： 制作记忆的方法
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申请号： US13163769申请日： 2011-06-20
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公开(公告)号： US20110250729A1公开(公告)日： 2011-10-13
- 发明人: Erh-Kun Lai , Chia-Hua Ho , Kuang-Yeu Hsieh
- 申请人： Erh-Kun Lai , Chia-Hua Ho , Kuang-Yeu Hsieh
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for fabricating a memory is described. Word lines are provided in a first direction. Bit lines are provided in a second direction. A top electrode is formed connecting to a corresponding word line. A bottom electrode is formed connecting to a corresponding bit line. A resistive layer is formed on the bottom electrode. At least two separate L-shaped liners are formed, wherein each L-shaped liner has variable resistive materials on both ends of the L-shaped liner and each L-shaped liner is coupled between the top electrode and the resistive layer.
公开/授权文献
- US08153485B2 Method for fabricating memory 公开/授权日：2012-04-10
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