发明申请
- 专利标题: STRUCTURE AND METHOD FOR MANUFACTURING ASYMMETRIC DEVICES
- 专利标题(中): 用于制造不对称装置的结构和方法
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申请号: US13167303申请日: 2011-06-23
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公开(公告)号: US20110254059A1公开(公告)日: 2011-10-20
- 发明人: Hasan M. Nayfeh , Andres Bryant , Arvind Kumar , Nivo Rovedo , Robert R. Robison
- 申请人: Hasan M. Nayfeh , Andres Bryant , Arvind Kumar , Nivo Rovedo , Robert R. Robison
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/808
- IPC分类号: H01L29/808 ; H01L21/337 ; B82Y99/00
摘要:
A plurality of gate structures are formed on a substrate. Each of the gate structures includes a first gate electrode and source and drain regions. The first gate electrode is removed from each of the gate structures. A first photoresist is applied to block gate structures having source regions in a source-down direction. A first halo implantation is performed in gate structures having source regions in a source-up direction at a first angle. The first photoresist is removed. A second photoresist is applied to block gate structures having source regions in a source-up direction. A second halo implantation is performed in gate structures having source regions in a source-down direction at a second angle. The second photoresist is removed. Replacement gate electrodes are formed in each of the gate structures.
公开/授权文献
- US08232151B2 Structure and method for manufacturing asymmetric devices 公开/授权日:2012-07-31