发明申请
- 专利标题: Hybrid material accumulation mode GAA CMOSFET
- 专利标题(中): 混合材料堆积模式GAA CMOSFET
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申请号: US12810594申请日: 2010-02-11
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公开(公告)号: US20110254099A1公开(公告)日: 2011-10-20
- 发明人: Deyuan Xiao , Xi Wang , Miao Zhang , Jing Chen , Zhongying Xue
- 申请人: Deyuan Xiao , Xi Wang , Miao Zhang , Jing Chen , Zhongying Xue
- 申请人地址: CN Shanghai
- 专利权人: Shanghai Institute of Microsystem and Information Technology Chinese Academy
- 当前专利权人: Shanghai Institute of Microsystem and Information Technology Chinese Academy
- 当前专利权人地址: CN Shanghai
- 优先权: CN200910199721.9 20091201
- 国际申请: PCT/CN10/70642 WO 20100211
- 主分类号: H01L27/092
- IPC分类号: H01L27/092
摘要:
A Ge and Si hybrid material accumulation mode GAA (Gate-All-Around) CMOSFET includes a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The first channel and the second channel have a circular-shaped cross section and are formed of p-type Ge and n-type Si, respectively; the surfaces of the first channel and the second channel are substantially surrounded by the gate region; a buried oxide layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the Si substrate to isolate them from one another. In an accumulation mode, current flows through the overall cylindrical channel, so as to achieve high carrier mobility, reduce low-frequency noises, prevent polysilicon gate depletion and short channel effects and increase the threshold voltage of the device.
公开/授权文献
- US08274118B2 Hybrid material accumulation mode GAA CMOSFET 公开/授权日:2012-09-25