发明申请
- 专利标题： PROGRAMMING IN A MEMORY DEVICE
- 专利标题（中）： 在存储设备中编程
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申请号： US13170420申请日： 2011-06-28
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公开(公告)号： US20110255343A1公开(公告)日： 2011-10-20
- 发明人: Violante Moschiano , Marco-Domenico Tiburzi , Giovanni Santin , Giulio G. Marotta
- 申请人： Violante Moschiano , Marco-Domenico Tiburzi , Giovanni Santin , Giulio G. Marotta
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 优先权： ITRM2008A000693 20081224
- 主分类号： G11C16/10
- IPC分类号： G11C16/10
摘要：
Methods for programming a memory device and memory devices are provided. According to at least one such method, a selected memory cell is programmed by a series of programming pulses. The series of programming pulses are configured in sets of programming pulses where each set has the same quantity of pulses and each programming pulse in the set has substantially the same amplitude (i.e., programming voltage). The amplitude of the programming pulses of subsequent sets is increased by a step voltage from the previous amplitude.
公开/授权文献
- US08174897B2 Programming in a memory device 公开/授权日：2012-05-08
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