发明申请
- 专利标题： SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13139789申请日： 2009-12-11
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公开(公告)号： US20110260217A1公开(公告)日： 2011-10-27
- 发明人: Yasuhiro Okamoto , Yuji Ando , Tatsuo Nakayama , Kazuki Ota , Takashi Inoue , Hironobu Miyamoto , Kazuomi Endo
- 申请人： Yasuhiro Okamoto , Yuji Ando , Tatsuo Nakayama , Kazuki Ota , Takashi Inoue , Hironobu Miyamoto , Kazuomi Endo
- 优先权： JP2009007395 20090116
- 国际申请： PCT/JP2009/006776 WO 20091211
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/335
摘要：
There is provided a semiconductor apparatus capable of achieving both a reverse blocking characteristic and a low on-resistance. The semiconductor apparatus includes a first semiconductor layer including a channel layer, a source electrode formed on the first semiconductor layer, a drain electrode formed at a distance from the source electrode on the first semiconductor layer, and a gate electrode formed between the source electrode and the drain electrode on the first semiconductor layer. The drain electrode includes a first drain region where reverse current between the first semiconductor layer and the first drain region is blocked, and a second drain region formed at a greater distance from the gate electrode than the first drain region, where a resistance between the first semiconductor layer and the second drain region is lower than a resistance between the first semiconductor layer and the first drain region.
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