发明申请
- 专利标题: PHASED NAND POWER-ON RESET
- 专利标题(中): 复位NAND上电复位
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申请号: US12770358申请日: 2010-04-29
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公开(公告)号: US20110271036A1公开(公告)日: 2011-11-03
- 发明人: Steven S. Cheng , Dennis Ea , Jianmin Huang , Alexander Kwok-Tung Mak , Farookh Moogat
- 申请人: Steven S. Cheng , Dennis Ea , Jianmin Huang , Alexander Kwok-Tung Mak , Farookh Moogat
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F1/26 ; G06F12/02
摘要:
A method and system for phasing power-intensive operations is disclosed. A non-volatile storage device controller detects a power reset. The controller is in communication with non-volatile memories in the non-volatile storage device. In response to detecting a power reset, the controller determines a current consumption necessary to reset the non-volatile memories in the non-volatile storage device. The controller simultaneously resets all of the non-volatile memories when the determined current consumption is less than a current consumption threshold. If the determined current consumption is greater than the current consumption threshold, the controller resets a first subset of the plurality of non-volatile memories, and after a predetermined delay, resets a second subset of the non-volatile memories. Therefore, a power-intensive operation may be performed without exceeding a current consumption threshold by dividing the operation into a sequence of steps that do not exceed the threshold.
公开/授权文献
- US08924626B2 Phased NAND power-on reset 公开/授权日:2014-12-30
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