发明申请
- 专利标题: SILICON CARBIDE SUBSTRATE
- 专利标题(中): 碳化硅基板
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申请号: US13146432申请日: 2010-09-28
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公开(公告)号: US20110284873A1公开(公告)日: 2011-11-24
- 发明人: Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
- 申请人: Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
- 申请人地址: JP Osaka-shi
- 专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址: JP Osaka-shi
- 优先权: JP2009-285239 20091216
- 国际申请: PCT/JP2010/066809 WO 20100928
- 主分类号: H01L29/161
- IPC分类号: H01L29/161
摘要:
A silicon carbide substrate has a substrate region and a support portion. The substrate region has a first single crystal substrate. The support portion is joined to a first backside surface of the first single crystal. The dislocation density of the first single crystal substrate is lower than the dislocation density of the support portion. At least one of the substrate region and the support portion has voids.