发明申请
US20110291299A1 Stress Reduction in Chip Packaging by a Stress Compensation Region Formed Around the Chip
有权
通过在芯片周围形成的应力补偿区域在芯片封装中的应力减小
- 专利标题： Stress Reduction in Chip Packaging by a Stress Compensation Region Formed Around the Chip
- 专利标题（中）： 通过在芯片周围形成的应力补偿区域在芯片封装中的应力减小
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申请号： US12964448申请日： 2010-12-09
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公开(公告)号： US20110291299A1公开(公告)日： 2011-12-01
- 发明人: Dmytro Chumakov , Michael Grillberger , Heike Berthold , Katrin Reiche
- 申请人： Dmytro Chumakov , Michael Grillberger , Heike Berthold , Katrin Reiche
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 优先权： DE102010029522.1 20100531
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L21/50
摘要：
A stress compensation region that may be appropriately positioned on a package substrate may compensate for or at least significantly reduce the thermally induced mechanical stress in a sensitive metallization system of a semiconductor die, in particular during the critical reflow process. For example, a stressor ring may be formed so as to laterally surround the chip receiving portion of the package substrate, wherein the stressor ring may efficiently compensate for the thermally induced deformation in the chip receiving portion.
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