发明申请
- 专利标题： CMOS Device with Raised Source and Drain Regions
- 专利标题（中）： CMOS器件具有引出源和漏极区域
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申请号： US13210993申请日： 2011-08-16
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公开(公告)号： US20110298049A1公开(公告)日： 2011-12-08
- 发明人: Chun-Sheng Liang , Hung-Ming Chen , Chien-Chao Huang , Fu-Liang Yang
- 申请人： Chun-Sheng Liang , Hung-Ming Chen , Chien-Chao Huang , Fu-Liang Yang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L27/092
- IPC分类号： H01L27/092
摘要：
A semiconductor structure includes a semiconductor substrate comprising a PMOS region and an NMOS region; a PMOS device in the PMOS region; and an NMOS device in the NMOS region. The PMOS device includes a first gate stack on the semiconductor substrate; a first offset spacer on a sidewall of the first gate stack; a stressor in the semiconductor substrate and adjacent to the first offset spacer; and a first raised source/drain extension region on the stressor and adjoining the first offset spacer, wherein the first raised source/drain extension region has a higher p-type dopant concentration than the stressor. The NMOS device in the NMOS region includes a second gate stack on the semiconductor substrate; a second offset spacer on a sidewall of the second gate stack; a second raised source/drain extension region on the semiconductor substrate and adjoining the second offset spacer; and a deep source/drain region adjoining the second raised source/drain extension region, wherein the deep source/drain region is free from stressors formed in the semiconductor substrate.
公开/授权文献
- US09905474B2 CMOS device with raised source and drain regions 公开/授权日：2018-02-27
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