发明申请
- 专利标题: SEMICONDUCTOR DEVICES HAVING CONTACT PLUGS WITH STRESS BUFFER SPACERS AND METHODS OF FABRICATING THE SAME
- 专利标题(中): 具有应力缓冲垫片的接触片的半导体器件及其制造方法
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申请号: US13205461申请日: 2011-08-08
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公开(公告)号: US20110300704A1公开(公告)日: 2011-12-08
- 发明人: Yong-Hoon Son , Yu-Gyun Shin , Jong-Wook Lee , Sun-Ghil Lee , In-Soo Jung , Young-Eun Lee , Deok-Hyung Lee
- 申请人: Yong-Hoon Son , Yu-Gyun Shin , Jong-Wook Lee , Sun-Ghil Lee , In-Soo Jung , Young-Eun Lee , Deok-Hyung Lee
- 优先权: KR2004-0028804 20040426
- 主分类号: H01L21/283
- IPC分类号: H01L21/283
摘要:
A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.