PARALLEL COLLISION DETECTION METHOD USING LOAD BALANCING AND PARALLEL DISTANCE COMPUTATION METHOD USING LOAD BALANCING
    1.
    发明申请
    PARALLEL COLLISION DETECTION METHOD USING LOAD BALANCING AND PARALLEL DISTANCE COMPUTATION METHOD USING LOAD BALANCING 审中-公开
    使用负载平衡和平行距离计算方法使用负载平衡的并行碰撞检测方法

    公开(公告)号:US20120131595A1

    公开(公告)日:2012-05-24

    申请号:US13114137

    申请日:2011-05-24

    IPC分类号: G06F9/46

    CPC分类号: G06F9/5083

    摘要: Disclosed herein is a parallel collision detection method using load balancing in order to detect collision between two objects of a polygon soup. The parallel collision detection method is processed in parallel using a plurality of threads. The parallel collision detection method includes traversing a Bounding Volume Traversal Tree (BVTT) using Bounding Volume Hierarchies (BVHs) related to the polygon soup in a depth first search manner or a width first search manner; recursively traversing the children node of an internal node (a parent node) when a currently traversed node is the internal node and two Boundary Volumes (BVs) in the corresponding node overlap, and stopping to traverse the node when the currently traversed node is the internal node and two Boundary Volumes (BVs) do not overlap; and storing collision primitives in a leaf node when the currently traversed node is the leaf node and collision primitives in the leaf node overlap.

    摘要翻译: 这里公开了一种使用负载平衡来检测多边形汤的两个物体之间的碰撞的平行碰撞检测方法。 使用多个线程并行处理并行冲突检测方法。 并行碰撞检测方法包括以深度第一搜索方式或宽度第一搜索方式使用与多边形汤相关的边界体层次(BVH)遍历边界体积遍历树(BVTT); 当当前遍历的节点是内部节点时,递归地遍历内部节点(父节点)的子节点,并且相应节点中的两个边界卷(BV)重叠,并且当当前遍历的节点是内部节点时,停止遍历节点 节点和两个边界体积(BV)不重叠; 并且当当前遍历的节点是叶节点并且叶节点中的冲突原语重叠时,将冲突原语存储在叶节点中。

    PROCESS FOR PRODUCTION OF ULTRA LOW PHOSPHOROUS AND CARBON FERROMANGANESE BY USING OF FERROMANGANESE SLAG
    2.
    发明申请
    PROCESS FOR PRODUCTION OF ULTRA LOW PHOSPHOROUS AND CARBON FERROMANGANESE BY USING OF FERROMANGANESE SLAG 有权
    通过使用富马酸钙生产超低磷和碳氟化合物的方法

    公开(公告)号:US20110265608A1

    公开(公告)日:2011-11-03

    申请号:US12937533

    申请日:2008-11-19

    IPC分类号: C22B47/00 C22B1/00

    摘要: Disclosed is a method of producing ultra low phosphorus and carbon ferromanganese having 0.1 wt % or less carbon and 0.03 wt % or less phosphorus. The method includes preparing low carbon silicomanganese having low phosphorus content, preparing molten manganese slag, subjecting the molten manganese slag and the low carbon silicomanganese having low phosphorus content to primary mixing and stirring at a ratio of 70˜72:28˜30 in a ladle, thus producing a metal melt and slag, and subjecting the metal melt separated from the above slag and the molten manganese slag identical to that used in the primary mixing and stirring to secondary mixing and stirring, thus producing slag and a metal melt including 91˜93 wt % manganese, 0.60˜0.85 wt % silicon, 0.05˜0.10 wt % carbon and 0.015˜0.02 wt % phosphorus.

    摘要翻译: 公开了一种生产具有0.1重量%或更少的碳和0.03重量%或更少的磷的超低磷和碳锰铁的方法。 该方法包括制备低磷含量的低碳硅锰矿,制备熔融锰渣,使熔融锰渣和低磷含量的低碳硅锰矿以70〜72:28〜30的比例进行一次混合搅拌 ,从而产生金属熔体和炉渣,并将从上述炉渣分离出的金属熔体和与初次混合搅拌相同的熔融锰渣进行二次混合和搅拌,从而产生炉渣和金属熔体,其包括91〜 93重量%的锰,0.60〜0.85重量%的硅,0.05〜0.10重量%的碳和0.015〜0.02重量%的磷。

    Method of forming a MOSFET on a strained silicon layer
    3.
    发明授权
    Method of forming a MOSFET on a strained silicon layer 有权
    在应变硅层上形成MOSFET的方法

    公开(公告)号:US07799648B2

    公开(公告)日:2010-09-21

    申请号:US12478345

    申请日:2009-06-04

    IPC分类号: H01L21/336

    CPC分类号: C30B29/06 C30B15/00

    摘要: A semiconductor device formed on a strained silicon layer and a method of manufacturing such a semiconductor device are disclosed. In accordance with this invention, a first silicon germanium layer is formed on a single crystalline silicon substrate; a second silicon germanium layer is formed on the first silicon germanium layer, the second silicon germanium layer having a concentration of germanium in a range of about 1 percent by weight to about 15 percent by weight based on the total weight of the second silicon germanium layer; a strained silicon layer is formed on the second silicon germanium layer; an isolation layer is formed at a first portion of the strained silicon layer; a gate structure is formed on the strained silicon layer; and, source/drain regions are formed at second portions of the strained silicon layer adjacent to the gate structure to form a transistor.

    摘要翻译: 公开了一种形成在应变硅层上的半导体器件及其制造方法。 根据本发明,在单晶硅衬底上形成第一硅锗层; 第二硅锗层形成在第一硅锗层上,第二硅锗层的锗浓度在约1重量%至约15重量%的范围内,基于第二硅锗层的总重量 ; 在第二硅锗层上形成应变硅层; 在应变硅层的第一部分处形成隔离层; 在应变硅层上形成栅极结构; 并且源极/漏极区域形成在与栅极结构相邻的应变硅层的第二部分处以形成晶体管。

    COATING COMPOSITION FOR ANTIREFLECTION AND ANTIREFLECTION FILM PREPARED BY USING THE SAME
    4.
    发明申请
    COATING COMPOSITION FOR ANTIREFLECTION AND ANTIREFLECTION FILM PREPARED BY USING THE SAME 有权
    涂料组合物用于制备抗反相和抗反射薄膜

    公开(公告)号:US20090296219A1

    公开(公告)日:2009-12-03

    申请号:US12448589

    申请日:2007-12-28

    IPC分类号: G02B1/11 F21V9/06 B05D3/06

    CPC分类号: G02B1/111

    摘要: The present invention provides a coating composition for antireflection that includes a low refraction-thermosetting resin having a refractive index of 1.2 to 1.45, a high refraction-ultraviolet curable resin having a refractive index of 1.46 to 2, and an ultraviolet absorber; an antireflection film manufactured using the coating composition; and a method of manufacturing the antireflection film. The antireflection film according to the present invention has excellent abrasion resistance and antireflection characteristic. Further, since the antireflection film can be manufactured in one coating process, it is possible to reduce manufacturing cost.

    摘要翻译: 本发明提供一种抗反射用涂料组合物,其包含折射率为1.2〜1.45的低折射率热固性树脂,折射率为1.46〜2的高折射紫外线固化树脂和紫外线吸收剂; 使用该涂料组合物制造的防反射膜; 以及制造防反射膜的方法。 根据本发明的抗反射膜具有优异的耐磨性和抗反射特性。 此外,由于可以在一个涂布工艺中制造抗反射膜,所以可以降低制造成本。

    Backlight unit and liquid crystal display device having the same
    5.
    发明申请
    Backlight unit and liquid crystal display device having the same 失效
    背光单元和具有该背光单元的液晶显示装置

    公开(公告)号:US20080214024A1

    公开(公告)日:2008-09-04

    申请号:US12005624

    申请日:2007-12-28

    IPC分类号: H01R12/00

    摘要: A capacitive connector for a backlight unit having a light source including: a first conductive layer covering an end portion of the light source; an insulation layer covering an external surface of the first conductive layer; and a second conductive layer separated from the first conductive layer with the insulation layer interposed therebetween.

    摘要翻译: 一种用于具有光源的背光单元的电容连接器,包括:覆盖所述光源的端部的第一导电层; 覆盖所述第一导电层的外表面的绝缘层; 以及与所述第一导电层分离的第二导电层,其间具有绝缘层。

    Inverter and display device having the same
    7.
    发明申请
    Inverter and display device having the same 有权
    逆变器和显示装置具有相同的功能

    公开(公告)号:US20070234166A1

    公开(公告)日:2007-10-04

    申请号:US11708937

    申请日:2007-02-20

    IPC分类号: G01R31/28 G06F11/00

    摘要: A display device and an inverter therefor are disclosed. The inverter has a main circuit board having a plurality of first circuit patterns and a plurality of second circuit patterns formed on a first side thereof, and a sub circuit board having first connecting patterns corresponding to the plurality of first circuit patterns formed on one side of the sub circuit board and second connecting patterns corresponding to the plurality of second circuit patterns formed on a second side thereof. The plurality of first circuit patterns are coupled with each other through the first connecting patterns, and the plurality of second circuit patterns are coupled with each other through the second connecting patterns. Thus, the present invention provides an inverter and a display device having the same, which are capable of being manufactured at a low production cost.

    摘要翻译: 公开了一种显示装置及其逆变器。 逆变器具有主电路板,其具有多个第一电路图案和形成在其第一侧上的多个第二电路图案,以及副电路板,其具有与形成在第一电路图的一侧上的多个第一电路图案对应的第一连接图案 子电路板和与形成在其第二侧上的多个第二电路图案对应的第二连接图案。 多个第一电路图案通过第一连接图案彼此耦合,并且多个第二电路图案通过第二连接图案彼此耦合。 因此,本发明提供一种能够以低生产成本制造的逆变器和具有该逆变器及其显示装置。