摘要:
Disclosed herein is a parallel collision detection method using load balancing in order to detect collision between two objects of a polygon soup. The parallel collision detection method is processed in parallel using a plurality of threads. The parallel collision detection method includes traversing a Bounding Volume Traversal Tree (BVTT) using Bounding Volume Hierarchies (BVHs) related to the polygon soup in a depth first search manner or a width first search manner; recursively traversing the children node of an internal node (a parent node) when a currently traversed node is the internal node and two Boundary Volumes (BVs) in the corresponding node overlap, and stopping to traverse the node when the currently traversed node is the internal node and two Boundary Volumes (BVs) do not overlap; and storing collision primitives in a leaf node when the currently traversed node is the leaf node and collision primitives in the leaf node overlap.
摘要:
Disclosed is a method of producing ultra low phosphorus and carbon ferromanganese having 0.1 wt % or less carbon and 0.03 wt % or less phosphorus. The method includes preparing low carbon silicomanganese having low phosphorus content, preparing molten manganese slag, subjecting the molten manganese slag and the low carbon silicomanganese having low phosphorus content to primary mixing and stirring at a ratio of 70˜72:28˜30 in a ladle, thus producing a metal melt and slag, and subjecting the metal melt separated from the above slag and the molten manganese slag identical to that used in the primary mixing and stirring to secondary mixing and stirring, thus producing slag and a metal melt including 91˜93 wt % manganese, 0.60˜0.85 wt % silicon, 0.05˜0.10 wt % carbon and 0.015˜0.02 wt % phosphorus.
摘要:
A semiconductor device formed on a strained silicon layer and a method of manufacturing such a semiconductor device are disclosed. In accordance with this invention, a first silicon germanium layer is formed on a single crystalline silicon substrate; a second silicon germanium layer is formed on the first silicon germanium layer, the second silicon germanium layer having a concentration of germanium in a range of about 1 percent by weight to about 15 percent by weight based on the total weight of the second silicon germanium layer; a strained silicon layer is formed on the second silicon germanium layer; an isolation layer is formed at a first portion of the strained silicon layer; a gate structure is formed on the strained silicon layer; and, source/drain regions are formed at second portions of the strained silicon layer adjacent to the gate structure to form a transistor.
摘要:
The present invention provides a coating composition for antireflection that includes a low refraction-thermosetting resin having a refractive index of 1.2 to 1.45, a high refraction-ultraviolet curable resin having a refractive index of 1.46 to 2, and an ultraviolet absorber; an antireflection film manufactured using the coating composition; and a method of manufacturing the antireflection film. The antireflection film according to the present invention has excellent abrasion resistance and antireflection characteristic. Further, since the antireflection film can be manufactured in one coating process, it is possible to reduce manufacturing cost.
摘要:
A capacitive connector for a backlight unit having a light source including: a first conductive layer covering an end portion of the light source; an insulation layer covering an external surface of the first conductive layer; and a second conductive layer separated from the first conductive layer with the insulation layer interposed therebetween.
摘要:
A display device and an inverter therefor are disclosed. The inverter has a main circuit board having a plurality of first circuit patterns and a plurality of second circuit patterns formed on a first side thereof, and a sub circuit board having first connecting patterns corresponding to the plurality of first circuit patterns formed on one side of the sub circuit board and second connecting patterns corresponding to the plurality of second circuit patterns formed on a second side thereof. The plurality of first circuit patterns are coupled with each other through the first connecting patterns, and the plurality of second circuit patterns are coupled with each other through the second connecting patterns. Thus, the present invention provides an inverter and a display device having the same, which are capable of being manufactured at a low production cost.
摘要:
A CMOS transistor structure and related method of manufacture are disclosed in which a first conductivity type MOS transistor comprises an enhancer and a second conductivity type MOS transistor comprises a second spacer formed of the same material as the enhancer. The second conductivity type MOS transistor also comprises a source/drain region formed in relation to an epitaxial layer formed in a recess region.
摘要:
The present invention relates to a coating composition for forming an anti-reflective coating layer for a display device, comprising a fluorinated silane with low surface tension, a conductive polymer with antistatic properties, water, and a solvent. Thus, the coating film of the present invention prepared by coating the composition has high anti-reflection, excellent stain resistance to liquid-phase stains such as fingerprints and the solid-phase stains such as dust by controlling the refractive index, surface energy, and conductivity, and thus can be usefully applied to the outermost side of a display device, regardless of the type of substrates such as a Braun tube or a flat display film and the presence of other coating layers such as a hard coating layer and an anti-glare coating layer.
摘要:
A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.