发明申请
- 专利标题: MEMORY CELL AND MEMORY DEVICE USING THE SAME
- 专利标题(中): 使用该存储单元的存储单元和存储器件
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申请号: US12887316申请日: 2010-09-21
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公开(公告)号: US20110305062A1公开(公告)日: 2011-12-15
- 发明人: Chun Won BYUN , Byeong Hoon Kim , Sung Min Yoon , Kyoung Ik Cho , Sang Hee Park , Chi Sun Hwang , Min Ki Ryu , Shin Hyuk Yang , Oh Sang Kwon , Eun Suk Park
- 申请人: Chun Won BYUN , Byeong Hoon Kim , Sung Min Yoon , Kyoung Ik Cho , Sang Hee Park , Chi Sun Hwang , Min Ki Ryu , Shin Hyuk Yang , Oh Sang Kwon , Eun Suk Park
- 申请人地址: KR Daejeon
- 专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址: KR Daejeon
- 优先权: KR10-2010-0053968 20100609
- 主分类号: G11C11/22
- IPC分类号: G11C11/22
摘要:
Provided are a memory cell and a memory device using the same, particularly, a nonvolatile non-destructive readable random access memory cell including a ferroelectric transistor as a storage unit and a memory device using the same. The memory cell includes a ferroelectric transistor having a drain to which a reference voltage is applied, a first switch configured to allow a source of the ferroelectric transistor to be connected to a first line in response to a scan signal, and a second switch configured to allow a gate of the ferroelectric transistor to be connected to a second line in response to the scan signal. The memory device enables random access and performs non-destructive read-out (NDRO) operations.
公开/授权文献
- US1251578A Shaping-machine. 公开/授权日:1918-01-01